The 76th JSAP Autumn Meeting, 2015

Presentation information

Oral presentation

13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[16a-2R-1~11] 13.2 Exploratory Materials, Physical Properties, Devices

Wed. Sep 16, 2015 9:00 AM - 12:00 PM 2R (231-2)

座長:末益 崇(筑波大)

9:30 AM - 9:45 AM

[16a-2R-3] Study of thermal stability of Fe3Si /Si(111) heterointerfaces

〇Yoshihito Maeda1,2, Yuki Kawakubo1, Yoshikazu Terai1, Kazumasa Narumi2, Seiji Sakai2 (1.Kyutech, 2.JAEA)

Keywords:Fe3Si/Si heterointerface,Ion beam analysis,Heusler alloy

In this study, we investugated thermal stability of Fe3Si/Si(111) with binary heterointerfaces by using ion beam analysis. Static atomic displacements obtained from the analysis indicated two regions with different behaviors. We will discuss these physical meachnism in the two regions.