[16a-3A-1~10] 10.4 Semiconductors, organic, optical, and quantum spintronics

▼ [16a-3A-5] Temperature dependence of in-plane anisotropic magnetoresistance in (Ga,Mn)As:Li

〇Shohei Miyakozawa¹, Lin Chen², Fumihiro Matsukura^1,2,3, Hideo Ohno^1,2,3 (1.RIEC, Tohoku Univ., 2.WPI-AIMR, Tohoku Univ., 3.CSIS, Tohoku Univ.)

Keywords:(Ga,Mn)As,ferromagnetic semiconductor,anisotropic magnetoresistance

In this work, we investigate the temperature dependence of in-plane anisotropic magnetoresistance (AMR) in molecular beam epitaxially grown Ga_0.9Mn_0.1As:Li_0.01. We measure temperature dependence of magnetoresistance under in-plane magnetic fields parallel and perpendicular to the current. The magnetoresistance is anisotropic, and larger resistance is observed for the magnetic field parallel (perpendicular) to the current at 10 K (110 K). The temperature dependence of the AMR shows that the temperature ~75 K at which the sign crossover occurs coincides with the temperature at which the sign crossover of the uniaxial anisotropy takes place.