Oral presentation

[16a-3A-1~10] 10.4 Semiconductors, organic, optical, and quantum spintronics

Wed. Sep 16, 2015 9:00 AM - 11:45 AM 3A (International Conference Room)

座長:千葉大地(東大)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

▲ [16a-3A-1] [Young Scientist Presentation Award Speech] Band structure of GaMnAs near the Fermi level studied by ultrafast time-resolved light-induced reflectivity measurements

〇Tomoaki Ishii¹, Tadashi Kawazoe¹, Yusuke Hashimoto², Hiroshi Terada¹, Iriya Muneta¹, Motoichi Ohtsu¹, Masaaki Tanaka¹, Shinobu Ohya¹ (1.The Univ. of Tokyo, 2.Radboud Univ. Nijmegen)

9:15 AM - 9:30 AM

[16a-3A-2] Effect of two-pulse excitation on photo-excited precession of magnetization in (Ga,Mn)As in ultra-short time region

〇Hiro Munekata¹, Takashi Matsuda¹ (1.ISEL, TITech)

9:30 AM - 9:45 AM

△ [16a-3A-3] Separation of the valence band and impurity band associated with the ferromagnetism transition in GaMnAs

〇(PC)Iriya Muneta¹, Shinobu Ohya¹, Masaaki Tanaka¹ (1.The Univ. of Tokyo)

9:45 AM - 10:00 AM

▼ [16a-3A-4] Interference effects on transmission magnetic circular dichroism spectra of GaMnAs

〇Hiroshi Terada¹, Shinobu Ohya¹, Masaaki Tanaka¹ (1.The Univ. of Tokyo)

10:00 AM - 10:15 AM

▼ [16a-3A-5] Temperature dependence of in-plane anisotropic magnetoresistance in (Ga,Mn)As:Li

〇Shohei Miyakozawa¹, Lin Chen², Fumihiro Matsukura^1,2,3, Hideo Ohno^1,2,3 (1.RIEC, Tohoku Univ., 2.WPI-AIMR, Tohoku Univ., 3.CSIS, Tohoku Univ.)

Break （10:15 AM - 10:30 AM）

10:30 AM - 10:45 AM

▲ [16a-3A-6] Growth and characterization of insulating ferromagnetic semiconductor (Al,Fe)Sb

〇(D)Anh Le¹, Daiki Kaneko¹, Pham Nam Hai², Masaaki Tanaka¹ (1.Tokyo Univ., 2.Tokyo Inst. of Tech.)

10:45 AM - 11:00 AM

[16a-3A-7] Evaluation of Atomic Distribution in Mn-doped ZnSnAs$_2$ Thin Films By Using Laser-assisted Three-Dimensional Atom Probe

〇(PC)Shiro HIDAKA¹, Hiroaki INOUE¹, Hideyuki TOYOTA¹, Hiroshi UCHIDA², Naotaka UCHITOMI¹ (1.Nagaoka Univ. of Tech., 2.TNA)

11:00 AM - 11:15 AM

▲ [16a-3A-8] Control of hole density in acceptor co-doped Si:Ce films

〇Yusuke Miyata¹, Ueno Kazuya¹, Yoshimura Takeshi¹, Ashida Atsushi¹, Fujimura Norifumi¹ (1.Osaka Pref. Univ.)

11:15 AM - 11:30 AM

▲ [16a-3A-9] Magnetic property of ternary transition-metal chalcogenide (Mn,Cr)Te thin films grown by MBE

〇(M2)Akira Ito¹, Ken Kanazawa¹, Shinji kuroda¹ (1.Grad. School of Pure & Appl. Sci., Univ. Tsukuba)

11:30 AM - 11:45 AM

▼ [16a-3A-10] High-temperature ferromagnetism in heavily Fe-doped ferromagnetic semiconductor (Ga,Fe)Sb

〇Tu Nguyen¹, Nam Hai Pham^1,2, Duc Anh Le¹, Masaaki Tanaka¹ (1.Tokyo Univ., 2.Tokyo Tech Inst.)

Oral presentation

[16p-3A-1~11] 10.4 Semiconductors, organic, optical, and quantum spintronics

Wed. Sep 16, 2015 1:45 PM - 5:00 PM 3A (International Conference Room)

座長:大矢忍(東大),植村哲也(北大)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:45 PM - 2:00 PM

△ [16p-3A-1] Spin relaxation of GaAs/AlGaAs/AlAs type-II tunneling bi-quantum-well

〇Takanori Aritake¹, Hao Wu¹, Canyu Jiang¹, Yoshiki Nakamura¹, Shunichi Muto², Atsushi Tackeuchi¹ (1.Waseda Univ., 2.Hokkaido Univ.)

2:00 PM - 2:15 PM

▲ [16p-3A-2] Drifting spin precession modified by cubic Dresselhaus spin-orbit interaction in GaAs quantum wells

〇Yoji Kunihashi¹, Haruki Sanada¹, Hideki Gotoh¹, Koji Onomitsu¹, Makoto Kohda², Junsaku Nitta², Tetsuomi Sogawa¹ (1.NTT BRL, 2.Tohoku Univ.)

2:15 PM - 2:30 PM

▼ [16p-3A-3] Asymmetric propagation of spin wave generated by light pulses

〇(D)Isao Yoshimine¹, Yoshito Tanaka¹, Takuya Satoh², Tsutomu Shimura¹ (1.Univ. of Tokyo, 2.Kyushu Univ.)

2:30 PM - 2:45 PM

▼ [16p-3A-4] Transient Analysis of Oblique Hanle Signals Observed in GaAs

〇(M2)Zhichao Lin¹, Masafumi Yamamoto¹, Tetsuya Uemura¹ (1.Hokkaido Univ.)

Break （2:45 PM - 3:00 PM）

3:00 PM - 3:15 PM

[16p-3A-5] Magneto-transport properties in layered semiconductor GaSe thin films

〇Shoichi Takasuna¹, Junichi Shiogai², Shunichiro Matsuzaka³, Makoto Kohda¹, Yutaka Oyama¹, Junsaku NItta¹ (1.Tohoku Univ., 2.Institute for Materials Research, 3.Nanophoton Corporation)

3:15 PM - 3:30 PM

[16p-3A-6] Fabrication of CdTe self-assembled dots containing a single Cr atom and luminescence spectra

〇(M1)Hayato Utsumi¹, Fumio Nakazawa¹, Ken Kanazawa¹, Shinji Kuroda¹, Alban Lafuente-Sampietro^1,2, Lucien Besombes², Herve Boukari² (1.Univ. of Tsukuba, 2.Neel Inst.)

3:30 PM - 3:45 PM

▼ [16p-3A-7] Observation of Joule-heating-induced spin magnetoresistance in non-degenerate n-type Si

〇Naoto Yamashita¹, Makoto Kameno^1,2, Yuichiro Ando¹, Hayato Koike³, Tomoyuki Sasaki³, Yoshishige Suzuki², Masashi Shiraishi¹ (1.Kyoto Univ., 2.Osaka Univ., 3.TDK Co.)

3:45 PM - 4:00 PM

△ [16p-3A-8] Temperature and Excitation power dependences of spin relaxation time in GaIn_0.36N_0.006AsSb_0.015/GaN_0.01AsSb_0.11/GaAs quantum well

〇Masaki Asakawa¹, Shunsuke Ohki¹, Tomoki Ishikawa¹, Lianhe Li², Jean-Christophe Harmand³, Shulong Lu⁴, Atsushi Tackeuchi¹ (1.Waseda Univ., 2.Leeds Univ., 3.LPN-CNRS, 4.SINANO-CAS)

Break （4:00 PM - 4:15 PM）

4:15 PM - 4:30 PM

△ [16p-3A-9] The comparison of spin relaxation in Be-doped GaAs with different Be concentrations at 10-77 K

〇Canyu Jiang¹, Hao Wu¹, Takanori Aritake¹, Yoshiki Nakamura¹, Pan Dai², Shulong Lu², Atsushi Tackeuchi¹ (1.Waseda Univ., 2.SINANO-CAS)

4:30 PM - 4:45 PM

△ [16p-3A-10] Tunneling anisotropic magnetoresistance at the interface of La_0.67Sr_0.33MnO₃ and Pentacene

〇(M2)Chihiro Miyahara¹, Takeshi Kamiya¹, Hirokazu Tada¹ (1.Osaka Univ.)

4:45 PM - 5:00 PM

[16p-3A-11] Direct Observations of Magnetic Proximity Effect in Graphene/Magnetic Oxide Junctions by Spin-polarized Metastable Deexcitation Spectroscopy

〇Seiji Sakai^1,5, Sayani Majumdar², Shiro Entani¹, Pavel Avramov^3,1, Yuki Fukaya¹, Hiroshi Naramoto^1,4, Yasushi Yamauchi^5,1 (1.ASRC JAEA, 2.Aalto Univ., Finland, 3.Kyungpook Univ., Korea, 4.Univ. Tsukuba, 5.NIMS)

Sessions

10 Spintronics and Magnetics » 10.4 Semiconductors, organic, optical, and quantum spintronics

[16a-3A-1~10] 10.4 Semiconductors, organic, optical, and quantum spintronics

▲ [16a-3A-1] [Young Scientist Presentation Award Speech] Band structure of GaMnAs near the Fermi level studied by ultrafast time-resolved light-induced reflectivity measurements

[16a-3A-2] Effect of two-pulse excitation on photo-excited precession of magnetization in (Ga,Mn)As in ultra-short time region

△ [16a-3A-3] Separation of the valence band and impurity band associated with the ferromagnetism transition in GaMnAs

▼ [16a-3A-4] Interference effects on transmission magnetic circular dichroism spectra of GaMnAs

▼ [16a-3A-5] Temperature dependence of in-plane anisotropic magnetoresistance in (Ga,Mn)As:Li

▲ [16a-3A-6] Growth and characterization of insulating ferromagnetic semiconductor (Al,Fe)Sb

[16a-3A-7] Evaluation of Atomic Distribution in Mn-doped ZnSnAs$_2$ Thin Films By Using Laser-assisted Three-Dimensional Atom Probe

▲ [16a-3A-8] Control of hole density in acceptor co-doped Si:Ce films

▲ [16a-3A-9] Magnetic property of ternary transition-metal chalcogenide (Mn,Cr)Te thin films grown by MBE

▼ [16a-3A-10] High-temperature ferromagnetism in heavily Fe-doped ferromagnetic semiconductor (Ga,Fe)Sb

[16p-3A-1~11] 10.4 Semiconductors, organic, optical, and quantum spintronics

△ [16p-3A-1] Spin relaxation of GaAs/AlGaAs/AlAs type-II tunneling bi-quantum-well

▲ [16p-3A-2] Drifting spin precession modified by cubic Dresselhaus spin-orbit interaction in GaAs quantum wells

▼ [16p-3A-3] Asymmetric propagation of spin wave generated by light pulses

▼ [16p-3A-4] Transient Analysis of Oblique Hanle Signals Observed in GaAs

[16p-3A-5] Magneto-transport properties in layered semiconductor GaSe thin films

[16p-3A-6] Fabrication of CdTe self-assembled dots containing a single Cr atom and luminescence spectra

▼ [16p-3A-7] Observation of Joule-heating-induced spin magnetoresistance in non-degenerate n-type Si

△ [16p-3A-8] Temperature and Excitation power dependences of spin relaxation time in GaIn_0.36N_0.006AsSb_0.015/GaN_0.01AsSb_0.11/GaAs quantum well

△ [16p-3A-9] The comparison of spin relaxation in Be-doped GaAs with different Be concentrations at 10-77 K

△ [16p-3A-10] Tunneling anisotropic magnetoresistance at the interface of La_0.67Sr_0.33MnO₃ and Pentacene

[16p-3A-11] Direct Observations of Magnetic Proximity Effect in Graphene/Magnetic Oxide Junctions by Spin-polarized Metastable Deexcitation Spectroscopy

Authentication

Sessions

10 Spintronics and Magnetics » 10.4 Semiconductors, organic, optical, and quantum spintronics

[16a-3A-1~10] 10.4 Semiconductors, organic, optical, and quantum spintronics

▲ [16a-3A-1] [Young Scientist Presentation Award Speech] Band structure of GaMnAs near the Fermi level studied by ultrafast time-resolved light-induced reflectivity measurements

[16a-3A-2] Effect of two-pulse excitation on photo-excited precession of magnetization in (Ga,Mn)As in ultra-short time region

△ [16a-3A-3] Separation of the valence band and impurity band associated with the ferromagnetism transition in GaMnAs

▼ [16a-3A-4] Interference effects on transmission magnetic circular dichroism spectra of GaMnAs

▼ [16a-3A-5] Temperature dependence of in-plane anisotropic magnetoresistance in (Ga,Mn)As:Li

▲ [16a-3A-6] Growth and characterization of insulating ferromagnetic semiconductor (Al,Fe)Sb

[16a-3A-7] Evaluation of Atomic Distribution in Mn-doped ZnSnAs$_2$ Thin Films By Using Laser-assisted Three-Dimensional Atom Probe

▲ [16a-3A-8] Control of hole density in acceptor co-doped Si:Ce films

▲ [16a-3A-9] Magnetic property of ternary transition-metal chalcogenide (Mn,Cr)Te thin films grown by MBE

▼ [16a-3A-10] High-temperature ferromagnetism in heavily Fe-doped ferromagnetic semiconductor (Ga,Fe)Sb

[16p-3A-1~11] 10.4 Semiconductors, organic, optical, and quantum spintronics

△ [16p-3A-1] Spin relaxation of GaAs/AlGaAs/AlAs type-II tunneling bi-quantum-well

▲ [16p-3A-2] Drifting spin precession modified by cubic Dresselhaus spin-orbit interaction in GaAs quantum wells

▼ [16p-3A-3] Asymmetric propagation of spin wave generated by light pulses

▼ [16p-3A-4] Transient Analysis of Oblique Hanle Signals Observed in GaAs

[16p-3A-5] Magneto-transport properties in layered semiconductor GaSe thin films

[16p-3A-6] Fabrication of CdTe self-assembled dots containing a single Cr atom and luminescence spectra

▼ [16p-3A-7] Observation of Joule-heating-induced spin magnetoresistance in non-degenerate n-type Si

△ [16p-3A-8] Temperature and Excitation power dependences of spin relaxation time in GaIn0.36N0.006AsSb0.015/GaN0.01AsSb0.11/GaAs quantum well

△ [16p-3A-9] The comparison of spin relaxation in Be-doped GaAs with different Be concentrations at 10-77 K

△ [16p-3A-10] Tunneling anisotropic magnetoresistance at the interface of La0.67Sr0.33MnO3 and Pentacene

[16p-3A-11] Direct Observations of Magnetic Proximity Effect in Graphene/Magnetic Oxide Junctions by Spin-polarized Metastable Deexcitation Spectroscopy

Authentication

△ [16p-3A-8] Temperature and Excitation power dependences of spin relaxation time in GaIn_0.36N_0.006AsSb_0.015/GaN_0.01AsSb_0.11/GaAs quantum well

△ [16p-3A-10] Tunneling anisotropic magnetoresistance at the interface of La_0.67Sr_0.33MnO₃ and Pentacene