[16p-3A-1~11] 10.4 Semiconductors, organic, optical, and quantum spintronics

△ [16p-3A-9] The comparison of spin relaxation in Be-doped GaAs with different Be concentrations at 10-77 K

〇Canyu Jiang¹, Hao Wu¹, Takanori Aritake¹, Yoshiki Nakamura¹, Pan Dai², Shulong Lu², Atsushi Tackeuchi¹ (1.Waseda Univ., 2.SINANO-CAS)

Keywords:semiconductor,spin

We investigated the spin relaxation times of Be-doped GaAs with different Be concentration by time resolved spin dependent photoluminescence measurement at 10-77 K. As a result, we revealed that Bir-Aronov-Pikus process is dominant at 10-77 K. We also obtained shorter spin relaxation time with higher Be concentration at 50-77 K. The fact implies that Elliot-Yafet process is related at 50-77 K.