[16p-3A-1~11] 10.4 Semiconductors, organic, optical, and quantum spintronics

△ [16p-3A-1] Spin relaxation of GaAs/AlGaAs/AlAs type-II tunneling bi-quantum-well

〇Takanori Aritake¹, Hao Wu¹, Canyu Jiang¹, Yoshiki Nakamura¹, Shunichi Muto², Atsushi Tackeuchi¹ (1.Waseda Univ., 2.Hokkaido Univ.)

Keywords:tunneling bi-quantum-well,type-II,spin relaxation

In this study, we have investigated the spin relaxation time in GaAs/AlGaAs/ AlAs type-II tunneling bi-quantum-well by pump and probe measurement at room temperature.The spin relaxation time was obtained to be 27.8 ps for the sample with 3.4-nm-thick barriers. The spin relaxation becomes faster as the tunneling becomes faster. It is assumed that spin relaxation was accelerated by tunneling.