[16a-PA2-1~60] 17 Nanocarbon Technology（Poster）

[16a-PA2-50] Doping of Graphene by Evaporated Silicon monoxide Film

〇Seiya Suzuki¹, Masamichi Yoshimura¹ (1.Toyota tech. inst.)

Keywords:graphene,Field effect transistor,doping

It has been reported that sillicon oxide (SiO_x) dielectric film depositon by thermal evaporation of sillicon monoxide (SiO) does not degrade the quality of single layer graphene. In this report, we investigated the effect of chemical composition (Si/O ratio) of SiO_x film on charge transfer to graphene, corresponding to graphene doping. As a result, SiO- and SiO₂-like film on graphene provided different doping of graphene.