[16p-2E-1~9] 3.13 Semiconductor optical devices

△ [16p-2E-4] Integration of GaInAsP-InP double-hetero laser on wafer bonded InP/Si substrate using MOVPE

〇Keiichi Matsumoto¹, Yoshinori Kanaya¹, Junya Kishikawa¹, Yuta Yamamoto¹, Toshiki Sukigara¹, Tetsuo Nishiyama¹, Kazuhiko Shimomura¹ (1.Sophia Univ.)

Keywords:Wafer direct bonding,MOVPE,GaInAsP/InP