[16p-2J-1~12] 3.9 Terahertz technologies

[16p-2J-10] Monolithically Integrated GaAsSb-based Backward Diode with InP-based HEMTs for Receiver Applications at 300 GHz

〇Tsuyoshi Takahashi^1,2, Masaru Sato^1,2, Shoichi Shiba^1,2, Yasuhiro Nakasha^1,2, Naoki Hara^1,2 (1.Fujitsu Labs., 2.Fujitsu)

Keywords:detector,terahertz,diode

In this study, we present highly sensitive GaAsSb-based heterojunction backward diode, which is monolithically integrated with InP-based HEMTs on an InP substrate, for the first time. The GaAsSb-based backward diodes, which comprise a circular mesa with a self-aligned cathode electrode, were fabricated on epitaxial layers of an InP-based HEMT. Typical characteristics of a backward diode were observed even though epitaxial layers of the HEMT exist under the backward diode layers. The InP-based HEMTs were also formed individually to the diodes and multilayer interconnections were formed. We achieved a sensitivity of 1,390 V/W at 300 GHz by adopting an impedance matching network to backward diodes. The resultant backward diodes are found to be effective in obtaining high performance THz ICs that consist of a detector and InP-based low noise amplifiers.