The 76th JSAP Autumn Meeting, 2015

Presentation information

Print

Oral presentation

8 Plasma Electronics » 8.3 deposition of thin film and surface treatment

[16p-2Q-1~13] 8.3 deposition of thin film and surface treatment

Wed. Sep 16, 2015 1:45 PM - 5:00 PM 2Q (231-1)

座長:荻野 明久(静岡大)

3:45 PM - 4:00 PM

△ [16p-2Q-9] Effect of sample cooling in nitriding of SiC surface using a remote nitrogen plasma

〇masaharu shimabayashi1, kazuaki kurihara2, koichi sasaki1 (1.Hokkaido Univ., 2.Research & Development Center, Toshiba Corp.)

Keywords:Silicon Carbide