[16p-4C-1~9] 13.8 Compound and power electron devices and process technology

[16p-4C-8] β-Ga₂O₃ Schottky Barrier Diode with Field Plate Edge Termination

〇Kohei Sasaki^1,2, Masataka Higashiwaki², Ken Goto¹, Kazushiro Nomura³, Quang Tu Thieu⁴, Rie Togashi³, Hisashi Murakami³, Yoshinao Kumagai³, Bo Monemar^4,5, Akinori Koukitu³, Akito Kuramata¹, Shigenobu Yamakoshi¹ (1.Tamura Corp., 2.NICT, 3.Tokyo Univ. of Agri. & Tech., 4.TUAT GIRO, 5.Linkoping Univ.)

Keywords:Ga2O3,Schottky barrier diode,field plate

β-Ga₂O₃ will be useful as a next-generation high power device material because of its excellent material properties and ease of mass production. In this study, we fabricated a β-Ga₂O₃ Schottky barrier diode with field plate edge termination. The device had a high breakdown voltage of 920 V, with a specific on-resistance of 5.0 mΩ•cm² and a barrier height of 1.14 eV at room temperature.