[16p-4C-1~9] 13.8 Compound and power electron devices and process technology

△ [16p-4C-7] Temperature-Dependent Device Characteristics of HVPE-Grown Ga₂O₃ Schottky Barrier Diodes

〇Keita Konishi¹, Kohei Sasaki^2,1, Ken Goto^2,3, Kazushiro Nomura³, Quang Tu Thieu^3,4, Rie Togashi³, Hisashi Murakami³, Yoshinao Kumagai³, Bo Monemar^4,5, Akinori Koukitu³, Akito Kuramata², Shigenobu Yamakoshi², Masataka Higashiwaki¹ (1.NICT, 2.Tamura Corp., 3.TUAT, 4.TUAT GIRO, 5.Linkoping Univ.)

Keywords:gallium oxide,Schottky Barrier Diodes,Halide vapor phase epitaxy

Halide vapor phase epitaxy (HVPE) is promising method for high-speed growth of high-purity Ga₂O₃ thin films. In this work, the potential of HVPE-grown Ga₂O₃ Schottky barrier diodes to operate at elevated temperatures was ascertained from the devices’ temperature-dependent electrical characteristics. Fundamental diode parameters, including the Schottky barrier height and Richardson constant, were also extracted from the measurements.