The 76th JSAP Autumn Meeting, 2015

Presentation information

Oral presentation

7 Beam Technology and Nanofabrication » 7.3 Micro/Nano patterning and fabrication

[16p-4E-1~11] 7.3 Micro/Nano patterning and fabrication

Wed. Sep 16, 2015 1:45 PM - 4:45 PM 4E (437)

座長:山口 徹(NTT),岡田 真(兵庫県立大),柳下 崇(首都大)

1:45 PM - 2:00 PM

[16p-4E-1] High precisely wavelength measuring technique for next generation multiple-patterning lithography

〇Hiroshi Furusato1, Masato Moriya1, Takahito Kumazaki1, Hiroaki Tsushima1, Takeshi Ohta1, Akihiko Kurosu1, Satoshi Tanaka1, Takashi Matsunaga1, Hakaru Mizoguchi1 (1.GPI)

Keywords:lithography,ArF laser,wavelength measurement

In semiconductor lithography, light source has to measure and control wavelength high precisely and stably for multiple-patterning refinement. Light source needs to have a wavelength variable function because exposure machine adjusts wavelength to compensate refractive index change caused by the atmospheric pressure. To satisfy these demands we have developed wavelength meter that is able to measure high precisely and extensively wavelength. We will report absolute accuracy and repeatable precision about the wavelength meter.