Oral presentation

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors

[14a-B4-1~13] 15.6 Group IV Compound Semiconductors

Sat. Mar 14, 2015 9:00 AM - 12:30 PM B4 (6B-104)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

△ [14a-B4-1] Theoretical Investigation of Chemical Reaction Dynamics in SiC Etching Process via Quantum Chemical Molecular Dynamics Simulation

〇(D)Hiroshi Ito¹, Takuya Kuwahara¹, Yuji Higuchi¹, Nobuki Ozawa¹, Momoji Kubo¹ (1.Tohoku Univ.)

9:15 AM - 9:30 AM

△ [14a-B4-2] Anisotropy of Side-etching Rate in Electrochemical Etching of 4H-SiC

〇Naoto Yamashita¹, Kosuke Sato², Tsunenobu Kimoto², Jun Suda² (1.Kyoto Univ., 2.Dept. of Electro. Sci. & Eng., Kyoto Univ.)

9:30 AM - 9:45 AM

[14a-B4-3] Novel Cap-free Annealing of SiC Trench Wafer using TaC/Ta Composite Materials

〇Norihito Yabuki¹, Satoshi Torimi¹, Satoru Nogami¹, Tadaaki Kaneko² (1.TOYO TANSO, 2.Kwansei Gakuin Univ.)

9:45 AM - 10:00 AM

[14a-B4-4] High Efficiency Activation of Phosphorus Atoms in 4H-SiC by Precise Control of Cooling Rate during Atmospheric Pressure Thermal Plasma Jet Irradiation

〇(M2)KEISUKE MARUYAMA¹, HIROAKI HANAFUSA¹, SHOHEI HAYASHI¹, HIDEKI MURAKAMI¹, SEIICHIRO HIGASHI¹ (1.Hiroshima Univ.)

10:00 AM - 10:15 AM

[14a-B4-5] Al doping of 4H-SiC by Laser Irradiation to Al film deposited on the surface

〇Akihiro Ikeda¹, Rikuho Sumina¹, Hiroshi Ikenoue¹, Tanemasa Asano¹ (1.Kyushu Univ.)

10:15 AM - 10:30 AM

[14a-B4-6] Femtosecond laser irradiation onto SiC substrate in liquid nitrogen

〇Reina Miyagawa¹, Takahiro Nakagawa¹, Osamu Eryu¹ (1.Nagoya Inst. of Tech.)

10:30 AM - 10:45 AM

[14a-B4-7] Electrical Characteristics of SiC Schottky Diode with Ti and TiC Electrodes

〇(B)Tomoyuki Suzuki¹, Mari Okamoto², Shu Munekiyo², Kuniyuki Kakushima², Yoshinori Kataoka², Akira Nishiyama², Nobuyuki Sugii², Hitoshi Wakabayashi², Kazuo Tsutsui², Kenji Natori¹, Hiroshi Iwai¹ (1.Tokyo Tech. FRC, 2.Tokyo Tech. IGSSE)

Break (10:45 AM - 11:00 AM)

11:00 AM - 11:15 AM

[14a-B4-8] High energy ion implantation process on 6 inch 4H-SiC substrates using SiO₂ mask

〇TAKU HORII¹, RYOSUKE KUBOTA¹, KEIJI WADA¹, SO TANAKA¹, TAKESHI SEKIGUCHI¹, YASUKI MIKAMURA¹ (1.Sumitomo Electric Industries, Ltd.)

11:15 AM - 11:30 AM

[14a-B4-9] Characterization of 3.3 kV 4H-SiC MOSFETs

〇Mitsuhiko Sakai¹, Kosuke Uchida¹, Toru Hiyoshi¹, Keiji Wada¹, Masaki Furumai¹, Takashi Tsuno¹, Yasuki Mikamura¹ (1.Sumitomo Electric)

11:30 AM - 11:45 AM

△ [14a-B4-10] Investigation of SiC MOSFETs with 3C/4H Different Poly-Type Junctions

〇Munetaka Noguchi¹, Toshiaki Iwamatsu¹, Naruhisa Miura¹, Shuhei Nakata¹, Satoshi Yamakawa¹ (1.Mitsubishi Electric Corp.)

11:45 AM - 12:00 PM

[14a-B4-11] FLR Edge Termination for 3.3 kV SiC-MOSFET

〇Kohei Ebihara^1,², Takaaki Tominaga^1,², Kenji Hamada¹, Shiro Hino^1,², Hiroshi Watanabe^1,², Naruhisa Miura¹, Shuhei Nakata^1,², Satoshi Yamakawa^1,² (1.Mitsubishi Electric, 2.FUPET)

12:00 PM - 12:15 PM

△ [14a-B4-12] Impact Ionization Coefficients in 4H-SiC Toward Ultrahigh-Voltage Power Devices

〇(DC)Hiroki Niwa¹, Jun Suda¹, Tsunenobu Kimoto¹ (1.Kyoto Univ.)

12:15 PM - 12:30 PM

[14a-B4-13] New Type of Unipolar SiC Diode

〇Satoshi Tanimoto¹, Kenichi Ueoka¹, Takaya Fujita¹, Kazutoshi Kojima², Toshiharu Makino³, Satoshi Yamasaki³ (1.Nissan ARC, 2.ADPERC-AIST, 3.EETG-AIST)

Session information