Oral presentation

10 Spintronics and Magnetics » 10.3 Giant magnetoresistance (GMR), tunnel magnetoresistance (TMR) and magnetic recording technologies

[14p-D11-1~7] 10.3 Giant magnetoresistance (GMR), tunnel magnetoresistance (TMR) and magnetic recording technologies

Sat. Mar 14, 2015 1:00 PM - 3:00 PM D11 (16-306)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:00 PM - 1:30 PM

[14p-D11-1] [Kashiko Kodate Award Speech] Enhancement of Current-perpendicular-to-plane giant magnetoresistance effect (CPP-GMR effect) toward spintronic applications

〇Hiromi Yuasa¹ (1.TOSHIBA)

1:30 PM - 1:45 PM

▲ [14p-D11-2] Bias voltage dependence in magnetic tunnel junctions with a spinel Mg-Al-O barrier

〇Hiroaki Sukegawa¹, Koichiro Inomata¹, Seiji Mitani¹ (1.NIMS)

1:45 PM - 2:00 PM

▲ [14p-D11-3] Enhancement of CPP-GMR by a CuZn alloy spacer layer

〇Takao Furubayashi¹, Yukiko Takahashi¹, Taisuke Sasaki¹, Kazuhiro Hono¹ (1.NIMS)

2:00 PM - 2:15 PM

▲ [14p-D11-4] Current-perpendicular-to-plane giant magnetoresistance effect in Co₂(Fe-Mn)Si/Ag-Mg/Co₂(Fe-Mn)Si junctions

Hiroyuki Narisawa¹, 〇Takahide Kubota¹, Koki Takanashi¹ (1.IMR, Tohoku Univ.)

2:15 PM - 2:30 PM

▲ [14p-D11-5] Polycrystalline CPP-GMR devices using <001> textured Co₂Fe(Ga_0.5Ge_0.5) Heusler alloy layer and conductive Mg_0.5Ti_0.5O_xbuffer layer

〇(D)YE DU^1,², Takao Furubayashi², Yukiko Takahashi², Yuya Sakuraba², Kazuhiro Hono^1,² (1.Univ. of Tsukuba, 2.NIMS)

2:30 PM - 2:45 PM

▼ [14p-D11-6] Temperature dependence of spin-dependent tunneling resistances of Co₂MnSi and Co₂(Mn,Fe)Si MTJs showing high tunneling magnetoresistances

〇(D)Bing Hu¹, Takeshi Kawami¹, Kidist Moges¹, Tetsuya Uemura¹, Masafumi Yamamoto¹ (1.Hokkaido Univ.)

2:45 PM - 3:00 PM

▼ [14p-D11-7] Crystal orientation dependence in all-B2-trilayer current-perpendicular-to-plane giant magnetoresistance pseudo spin-valves using Co₂Fe(Ge_0.5Ga_0.5) Heusler alloy and NiAl spacer

〇(D)Jiamin CHEN^1,², Takao Furubayashi¹, Yukiko Takahashi¹, Taisuke Sasaki¹, Kazuhiro Hono^1,² (1.NIMS, 2.Tsukuba Univ.)

Session information

[14p-D11-1~7] 10.3 Giant magnetoresistance (GMR), tunnel magnetoresistance (TMR) and magnetic recording technologies

[14p-D11-1] [Kashiko Kodate Award Speech] Enhancement of Current-perpendicular-to-plane giant magnetoresistance effect (CPP-GMR effect) toward spintronic applications

▲ [14p-D11-2] Bias voltage dependence in magnetic tunnel junctions with a spinel Mg-Al-O barrier

▲ [14p-D11-3] Enhancement of CPP-GMR by a CuZn alloy spacer layer

▲ [14p-D11-4] Current-perpendicular-to-plane giant magnetoresistance effect in Co₂(Fe-Mn)Si/Ag-Mg/Co₂(Fe-Mn)Si junctions

▲ [14p-D11-5] Polycrystalline CPP-GMR devices using <001> textured Co₂Fe(Ga_0.5Ge_0.5) Heusler alloy layer and conductive Mg_0.5Ti_0.5O_xbuffer layer

▼ [14p-D11-6] Temperature dependence of spin-dependent tunneling resistances of Co₂MnSi and Co₂(Mn,Fe)Si MTJs showing high tunneling magnetoresistances

▼ [14p-D11-7] Crystal orientation dependence in all-B2-trilayer current-perpendicular-to-plane giant magnetoresistance pseudo spin-valves using Co₂Fe(Ge_0.5Ga_0.5) Heusler alloy and NiAl spacer

Authentication

Session information

[14p-D11-1~7] 10.3 Giant magnetoresistance (GMR), tunnel magnetoresistance (TMR) and magnetic recording technologies

[14p-D11-1] [Kashiko Kodate Award Speech] Enhancement of Current-perpendicular-to-plane giant magnetoresistance effect (CPP-GMR effect) toward spintronic applications

▲ [14p-D11-2] Bias voltage dependence in magnetic tunnel junctions with a spinel Mg-Al-O barrier

▲ [14p-D11-3] Enhancement of CPP-GMR by a CuZn alloy spacer layer

▲ [14p-D11-4] Current-perpendicular-to-plane giant magnetoresistance effect in Co2(Fe-Mn)Si/Ag-Mg/Co2(Fe-Mn)Si junctions

▲ [14p-D11-5] Polycrystalline CPP-GMR devices using <001> textured Co2Fe(Ga0.5Ge0.5) Heusler alloy layer and conductive Mg0.5Ti0.5Ox buffer layer

▼ [14p-D11-6] Temperature dependence of spin-dependent tunneling resistances of Co2MnSi and Co2(Mn,Fe)Si MTJs showing high tunneling magnetoresistances

▼ [14p-D11-7] Crystal orientation dependence in all-B2-trilayer current-perpendicular-to-plane giant magnetoresistance pseudo spin-valves using Co2Fe(Ge0.5Ga0.5) Heusler alloy and NiAl spacer

Authentication

▲ [14p-D11-4] Current-perpendicular-to-plane giant magnetoresistance effect in Co₂(Fe-Mn)Si/Ag-Mg/Co₂(Fe-Mn)Si junctions

▲ [14p-D11-5] Polycrystalline CPP-GMR devices using <001> textured Co₂Fe(Ga_0.5Ge_0.5) Heusler alloy layer and conductive Mg_0.5Ti_0.5O_xbuffer layer

▼ [14p-D11-6] Temperature dependence of spin-dependent tunneling resistances of Co₂MnSi and Co₂(Mn,Fe)Si MTJs showing high tunneling magnetoresistances

▼ [14p-D11-7] Crystal orientation dependence in all-B2-trilayer current-perpendicular-to-plane giant magnetoresistance pseudo spin-valves using Co₂Fe(Ge_0.5Ga_0.5) Heusler alloy and NiAl spacer