Symposium

[12p-B4-1~10] Progress of power semiconductors, toward wide band-gap materials beyond silicon

Thu. Mar 12, 2015 1:15 PM - 6:15 PM B4 (6B-104)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:15 PM - 1:30 PM

[12p-B4-1] Introduction

〇Tsunenobu Kimoto¹ (1.Kyoto Univ.)

1:30 PM - 2:00 PM

[12p-B4-2] Cross-ministerial Strategic Innovation Promotion Program; “Next-generation Power Electronics”

〇Tatsuo Oomori¹, Yasunori Tanaka¹ (1.Cabinet Office)

2:00 PM - 2:30 PM

[12p-B4-3] Progress in Power Semiconductor Devices

〇Wataru Saito¹ (1.Toshiba)

2:30 PM - 3:00 PM

[12p-B4-4] Crystal growth of single crystals for power devices

〇Koichi Kakimoto¹, Bing Gao¹, Xin Liu¹, Satoshi Nakano¹, Shin-ichi NIshizawa², Hirofumi Harada³, Yoshiji Miyamura³, Takafumi Sekiguchi³, Yoshihiro Kangawa¹ (1.RIAM, Kyushu Univ., 2.AIST, 3.NIMS)

3:00 PM - 3:30 PM

[12p-B4-5] Evaluation of Semiconductor Materials for Power Devices

〇Hidekazu Yamamoto¹ (1.Chiba Inst. of Tech.)

Break （3:30 PM - 3:45 PM）

3:45 PM - 4:15 PM

[12p-B4-6] Properties of Semiconductor Materials for Power Devices

〇Jun Suda¹ (1.Kyoto Univ.)

4:15 PM - 4:45 PM

[12p-B4-7] Development of Advanced Gate Insulators for Power Semiconductor Devices

〇Heiji Watanabe¹, Takuji Hosoi¹ (1.Osaka Univ.)

4:45 PM - 5:15 PM

[12p-B4-8] Present status of ion implantation tecnlogy to power device fabrication process

〇Tetsu Kachi¹ (1.Toyota CRDL)

5:15 PM - 5:45 PM

[12p-B4-9] Packaging Technologies Modules for Next Generation Power Semiconductors

〇Yoshikazu Takahashi¹, Haruo Nakazawa¹, Yoshitaka Nishimura¹ (1.Fuji Electric)

5:45 PM - 6:15 PM

[12p-B4-10] Characteristics of Semiconductor Device Necessary for Next Generation Power Electronics Components

〇Hidenori Hara¹ (1.YASKAWA ELECTRIC Co.)

Sessions

Symposium » Progress of power semiconductors, toward wide band-gap materials beyond silicon