Oral presentation

[12a-A26-1~8] 13.10 Compound solar cells

Thu. Mar 12, 2015 10:00 AM - 12:00 PM A26 (6A-201)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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10:00 AM - 10:15 AM

[12a-A26-1] Sulfur annealing of electrochemically deposited iron sulfide thin films and application to heterojunction cells with ZnO

〇Takahiro Kajima¹, Shoichi Kawai², Masaya Ichimura¹ (1.Nagoya Inst. of Tech., 2.DENSO CORP.)

10:15 AM - 10:30 AM

[12a-A26-2] Fabrication of Electrodeposited Cu₂O/α-Fe₂O₃ Heterojunction Solar Cells

〇(M1)Chaolong Zhang¹, Masaya Ichimura¹ (1.Nagoya Inst of Tech)

10:30 AM - 10:45 AM

[12a-A26-3] Effect of S-Sn precursors for sulfurization of SnS thin films

〇Tsubasa Yokoi¹, Shuntaro Mikami¹, Hiroki Sumi¹, Satoru Aihara¹, Hiro Nagayasu¹, Kazuma Hisatomi¹, Mutsumi Sugiyama¹ (1.Faculty of Sci. and Tech. / RIST, Tokyo Univ. of Science)

10:45 AM - 11:00 AM

△ [12a-A26-4] Evaluation of band offset at heterojunction interface between ZnSnP₂ and sulfides

〇(D)Shigeru NAKATSUKA¹, Hiroshi NAKAMOTO¹, Yoshitaro NOSE¹, Shigeru IKEDA², Yasuharu SHIRAI¹ (1.Kyoto Univ., 2.Osaka Univ.)

11:00 AM - 11:15 AM

[12a-A26-5] Impact of Cu/Sn ratio for Cu₂SnS₃ thin films grown by sulfurization processe

〇Hiroki Sumi¹, Soichi Sato¹, Guannan Shi¹, Mutsumi Sugiyama¹ (1.Faculty of Sci. and Tech. / RIST,Tokyo Univ. of Science)

11:15 AM - 11:30 AM

△ [12a-A26-6] Preparation of Cu₂SnS₃ thin films by sulfurization of Na addition precursor

〇Mitsuki Nakashima¹, Junya Fujimoto¹, Toshiyuki Yamaguchi¹ (1.N. I. Tech. Wakayama)

11:30 AM - 11:45 AM

[12a-A26-7] Donor-Acceptor Pair Recombination Luminescence from Cu₂SnS₃ Thin Film

〇Naoya Aihara¹, Kunihiko Tanaka¹, Hisao Uchiki¹, Ayaka Kanai², Hideaki Araki^2,³ (1.Nagaoka University of Tech., 2.Nagaoka National College of Tech., 3.JST-PRESTO)

11:45 AM - 12:00 PM

[12a-A26-8] First-principle study of defect formation in photovoltaic semiconductor Cu₂SnS₃

〇Hironori Nishihara¹, Tsuyoshi Maeda¹, Akio Shigemi¹, Takahiro Wada¹ (1.Ryukoku Univ.)

Oral presentation

[13a-A26-1~10] 13.10 Compound solar cells

Fri. Mar 13, 2015 9:30 AM - 12:15 PM A26 (6A-201)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:30 AM - 9:45 AM

[13a-A26-1] Measurement of Energy Distribution of Conduction Electrons in Semiconductor Superlattice by Visible Light Photoemission Spectroscopy

〇(DC)Fumiaki Ichihashi¹, Kenji Nishitani¹, Xinyu Dong¹, Takahiko Kawaguchi², Makoto Kuwahara¹, Shunta Harada¹, Miho Tagawa¹, Takahiro Ito¹, Toru Ujihara¹ (1.Nagoya Univ., 2.VBL Nagoya Univ.)

9:45 AM - 10:00 AM

▼ [13a-A26-2] Carrier Collection Efficiency for Multiple Quantum Well Solar Cells under High Sunlight Concentration

〇(D)Warakorn Yanwachirakul¹, Hiromasa Fujii¹, Kasidit Toprasartpong¹, Hassanet Sodabunlu¹, Kentaroh Watanabe², Masakazu Sugiyama¹, Yoshiaki Nakano¹ (1.Univ. of Tokyo, 2.RCAST)

10:00 AM - 10:15 AM

△ [13a-A26-3] Ultra-fast Transient Photo-carrier Response in InAs/GaAs Quantum Dot Superlattice Solar Cell

〇Taizo Tanibuchi¹, Tomoyuki Kada¹, Naofumi Kasamatsu¹, Takuya Matsumura¹, Shigeo Asahi¹, Takashi Kita¹ (1.Kobe Univ.)

10:15 AM - 10:30 AM

▲ [13a-A26-4] Design and Simulation of Grating-Shaped Nano-Wall Structures for Light Absorption Enhancement in Quantum Dot Solar Cells

〇(M2)Cyril Digiola^1,², Satoshi Iwamoto^1,², Yasuhiko Arakawa^1,² (1.NanoQuine, 2.IIS, Univ. of Tokyo)

10:30 AM - 10:45 AM

[13a-A26-5] The effect of light concentration on Si doped quantum dot solar cell

〇(DC)Shunya Naitoh^1,², Naoya Miyashita², Hokuto Shimomura^1,², Ryo Tamaki², Takuya Hoshii^1,², Yoshitaka Okada^1,² (1.The Univ. of Tokyo, 2.RCAST)

Break （10:45 AM - 11:00 AM）

11:00 AM - 11:15 AM

[13a-A26-6] Two-Step Photon Absorption Processes in Si-doped InAs Quantum Dot Solar Cells

〇Hokuto Shimomura¹, Ryo Tamaki², Shunya Naitoh¹, Yoshitaka Okada^1,² (1.School of Engineering, The Univ. of Tokyo, 2.RCAST, The Univ. of Tokyo)

11:15 AM - 11:30 AM

△ [13a-A26-7] Quantitative Analysis of Two-Step Photon Absorption Considering Photofilling Effect

〇Ryo Tamaki¹, Yasushi Shoji¹, Yoshitaka Okada¹, Kenjiro Miyano¹ (1.RCAST, The Univ. of Tokyo)

11:30 AM - 11:45 AM

△ [13a-A26-8] Wavelength dependence of photocurrent induced by two-step photon absorption process in a single quantum dot

〇Tomohiro Nozawa^1,³, Hiroyuki Takagi^1,², Katsuyuki Watanabe¹, Yasuhiko Arakawa^1,² (1.NanoQuine, 2.IIS, Univ. of Tokyo, 3.SHARP)

11:45 AM - 12:00 PM

▲ [13a-A26-9] Negative two-step two-photon-absorption photocurrent induced by infrared photons in quantum dots: dot density dependence

〇(PC)David Tex^1,², Kouichi Akahane³, Yoshihiko Kanemitsu^1,² (1.ICR Kyoto Univ., 2.JST-CREST, 3.NICT)

12:00 PM - 12:15 PM

[13a-A26-10] Excitation-intensity dependence of two-step photocurrent of quantum dot intermediate-band solar cells

〇(DC)Shigeo Asahi¹, Haruyuki Teranishi¹, Naofumi Kasamatsu¹, Tomoyuki Kada¹, Toshiyuki Kaizu¹, Takashi Kita¹ (1.Kobe Univ.)

Oral presentation

[14a-A26-1~9] 13.10 Compound solar cells

Sat. Mar 14, 2015 9:30 AM - 12:00 PM A26 (6A-201)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:30 AM - 9:45 AM

[14a-A26-1] Polarization Engineered Novel Structure of Metal-Face III-Nitride Solar Cell

〇Akihiro Nakamura¹, Katsushi Fujii², Masakazu Sugiyama¹, Yoshiaki Nakano¹ (1.Tokyo Univ., 2.Global Solar+ Initiative)

9:45 AM - 10:00 AM

[14a-A26-2] Detailed Analysis of Bonding Interfaces in Smart Stack Structures

〇Hidenori Mizuno¹, Kikuo Makita¹, Yasuo Hozumi¹, Takeyoshi Sugaya¹, Koji Matsubara¹, Hidetaka Takato¹ (1.AIST)

10:00 AM - 10:15 AM

▲ [14a-A26-3] Reduction in Optical Reflection Loss at Intermediate Adhesive Layer for Mechanical Stacked Multi-Junction Solar Cells

〇Shunsuke Kimura¹, Tomohiko Nakamura¹, Shinya Yoshidomi¹, Masahiko Hasumi¹, Toshiyuki Sameshima¹ (1.TUAT)

10:15 AM - 10:30 AM

▲ [14a-A26-4] Contribution of absorption and recombination losses in subcell photocurrent-spectra determined by wavelength-dependent time-resolved photoluminescence

〇(PC)David Tex^1,⁴, Hidefumi Akiyama^2,⁴, Mitsuru Imaizumi³, Yoshihiko Kanemitsu^1,⁴ (1.ICR Kyoto Univ., 2.ISSP Tokyo Univ., 3.JAXA, 4.JST-CREST)

10:30 AM - 10:45 AM

[14a-A26-5] Terahertz Radiation from Triple Junction Solar Cells

〇shota hamauchi¹, yuji sakai¹, toshihito umegaki¹, akira ito², hidetoshi nakanishi², iwao kawayama¹, hironaru murakami¹, masayoshi tonouchi¹ (1.ILE, Osaka Univ., 2.SCREEN Holdings.)

Break （10:45 AM - 11:00 AM）

11:00 AM - 11:15 AM

[14a-A26-6] Quantitative Electroluminescence Imaging of Multi-Junction Solar Cells

〇Masahiro Yoshita¹, Lin Zhu¹, Changsu Kim¹, Hidefumi Akiyama¹, Shaoqiang Chen², Toshimitsu Mochizuki³, Hidehiro Kubota⁴, Tetsuya Nakamura⁵, Mitsuru Imaizumi⁵, Yoshihiko Kanemitsu⁶ (1.ISSP, Univ. of Tokyo, 2.ECNU, 3.AIST, 4.ATTO Corp., 5.JAXA, 6.ICR, Kyoto Univ.)

11:15 AM - 11:30 AM

[14a-A26-7] Effect of layer undulatioin in InGaAs/GaAsP superlattice solar cells

〇(B)Takumi Katoh¹, Hiromasa Fujii¹, Sodabanlu Hassanet², Kentaroh Watanabe², Masakazu Sugiyama¹, Yoshiaki Nakano¹ (1.Tokyo Univ., 2.RCAST)

11:30 AM - 11:45 AM

▲ [14a-A26-8] Lattice-matched III-V/Ge triple junction solar cell with InGaAs/GaAsP superlattice middle cell

〇Hassanet Sodabanlu¹, Hiromasa Fujii², Kentaroh Watanabe¹, Masakazu Sugiyama², Yoshiaki Nakano^1,² (1.RCAST, The Univ. of Tokyo, 2.School of Engineering, The Univ. of Tokyo)

11:45 AM - 12:00 PM

[14a-A26-9] 1.15 eV-Effective Bandgap Strain-Balanced InGaAs/GaAsP Quantum Wells towards High-Efficiency Lattice-Matched 4-Junction Solar Cells

〇Kasidit Toprasertpong¹, Hiromasa Fujii¹, Tomos Thomas³, Markus Fuhrer³, Diego Alonso-Alvarez³, Daniel J. Farrell³, Kentaroh Watanabe², Yoshitaka Okada², Nicholas J. Ekins-Daukes³, Masakazu Sugiyama¹, Yoshiaki Nakano¹ (1.Univ. Tokyo, 2.RCAST, 3.Imperial Coll.)

Sessions

13 Semiconductors » 13.10 Compound solar cells

[12a-A26-1~8] 13.10 Compound solar cells

[12a-A26-1] Sulfur annealing of electrochemically deposited iron sulfide thin films and application to heterojunction cells with ZnO

[12a-A26-2] Fabrication of Electrodeposited Cu₂O/α-Fe₂O₃ Heterojunction Solar Cells

[12a-A26-3] Effect of S-Sn precursors for sulfurization of SnS thin films

△ [12a-A26-4] Evaluation of band offset at heterojunction interface between ZnSnP₂ and sulfides

[12a-A26-5] Impact of Cu/Sn ratio for Cu₂SnS₃ thin films grown by sulfurization processe

△ [12a-A26-6] Preparation of Cu₂SnS₃ thin films by sulfurization of Na addition precursor

[12a-A26-7] Donor-Acceptor Pair Recombination Luminescence from Cu₂SnS₃ Thin Film

[12a-A26-8] First-principle study of defect formation in photovoltaic semiconductor Cu₂SnS₃

[13a-A26-1~10] 13.10 Compound solar cells

[13a-A26-1] Measurement of Energy Distribution of Conduction Electrons in Semiconductor Superlattice by Visible Light Photoemission Spectroscopy

▼ [13a-A26-2] Carrier Collection Efficiency for Multiple Quantum Well Solar Cells under High Sunlight Concentration

△ [13a-A26-3] Ultra-fast Transient Photo-carrier Response in InAs/GaAs Quantum Dot Superlattice Solar Cell

▲ [13a-A26-4] Design and Simulation of Grating-Shaped Nano-Wall Structures for Light Absorption Enhancement in Quantum Dot Solar Cells

[13a-A26-5] The effect of light concentration on Si doped quantum dot solar cell

[13a-A26-6] Two-Step Photon Absorption Processes in Si-doped InAs Quantum Dot Solar Cells

△ [13a-A26-7] Quantitative Analysis of Two-Step Photon Absorption Considering Photofilling Effect

△ [13a-A26-8] Wavelength dependence of photocurrent induced by two-step photon absorption process in a single quantum dot

▲ [13a-A26-9] Negative two-step two-photon-absorption photocurrent induced by infrared photons in quantum dots: dot density dependence

[13a-A26-10] Excitation-intensity dependence of two-step photocurrent of quantum dot intermediate-band solar cells

[14a-A26-1~9] 13.10 Compound solar cells

[14a-A26-1] Polarization Engineered Novel Structure of Metal-Face III-Nitride Solar Cell

[14a-A26-2] Detailed Analysis of Bonding Interfaces in Smart Stack Structures

▲ [14a-A26-3] Reduction in Optical Reflection Loss at Intermediate Adhesive Layer for Mechanical Stacked Multi-Junction Solar Cells

▲ [14a-A26-4] Contribution of absorption and recombination losses in subcell photocurrent-spectra determined by wavelength-dependent time-resolved photoluminescence

[14a-A26-5] Terahertz Radiation from Triple Junction Solar Cells

[14a-A26-6] Quantitative Electroluminescence Imaging of Multi-Junction Solar Cells

[14a-A26-7] Effect of layer undulatioin in InGaAs/GaAsP superlattice solar cells

▲ [14a-A26-8] Lattice-matched III-V/Ge triple junction solar cell with InGaAs/GaAsP superlattice middle cell

[14a-A26-9] 1.15 eV-Effective Bandgap Strain-Balanced InGaAs/GaAsP Quantum Wells towards High-Efficiency Lattice-Matched 4-Junction Solar Cells

Authentication

Sessions

13 Semiconductors » 13.10 Compound solar cells

[12a-A26-1~8] 13.10 Compound solar cells

△ [12a-A26-4] Evaluation of band offset at heterojunction interface between ZnSnP2 and sulfides

△ [12a-A26-6] Preparation of Cu2SnS3 thin films by sulfurization of Na addition precursor

[13a-A26-1~10] 13.10 Compound solar cells

▼ [13a-A26-2] Carrier Collection Efficiency for Multiple Quantum Well Solar Cells under High Sunlight Concentration

△ [13a-A26-3] Ultra-fast Transient Photo-carrier Response in InAs/GaAs Quantum Dot Superlattice Solar Cell

▲ [13a-A26-4] Design and Simulation of Grating-Shaped Nano-Wall Structures for Light Absorption Enhancement in Quantum Dot Solar Cells

△ [13a-A26-7] Quantitative Analysis of Two-Step Photon Absorption Considering Photofilling Effect

△ [13a-A26-8] Wavelength dependence of photocurrent induced by two-step photon absorption process in a single quantum dot

▲ [13a-A26-9] Negative two-step two-photon-absorption photocurrent induced by infrared photons in quantum dots: dot density dependence

[14a-A26-1~9] 13.10 Compound solar cells

▲ [14a-A26-3] Reduction in Optical Reflection Loss at Intermediate Adhesive Layer for Mechanical Stacked Multi-Junction Solar Cells

▲ [14a-A26-4] Contribution of absorption and recombination losses in subcell photocurrent-spectra determined by wavelength-dependent time-resolved photoluminescence

▲ [14a-A26-8] Lattice-matched III-V/Ge triple junction solar cell with InGaAs/GaAsP superlattice middle cell

Authentication

△ [12a-A26-4] Evaluation of band offset at heterojunction interface between ZnSnP₂ and sulfides

△ [12a-A26-6] Preparation of Cu₂SnS₃ thin films by sulfurization of Na addition precursor