Oral presentation

[12a-D13-1~9] 15.1 Bulk crystal growth

Thu. Mar 12, 2015 9:30 AM - 11:45 AM D13 (16-502)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:30 AM - 9:45 AM

▲ [12a-D13-1] Properties of InGaSb crystals grown under μG at International Space Station and 1G conditions

〇NirmalKumar Velu¹, Arivanandhan Mukannan¹, Rajesh Govindasamy¹, Tadanobu Koyama¹, Yoshimi Momose¹, Yuko Inatomi², Kaoruho Sakata², Takehiko Ishikawa², Masahiro Takayanagi², Shinnichi Yoda², Shigeki Kamigaichi², Tetsuo Ozawa³, Yasunori Okano⁴, Yasuhiro Hayakawa¹ (1.RIE, Shizuoka Univ., 2.JAXA, 3.Shizuoka Insti Sci., 4.Osaka Univ.)

9:45 AM - 10:00 AM

[12a-D13-2] Homogeneous SiGe crystals grown by the TLZ method in microgravity condition

〇Yasutomo Arai¹, Kyoichi Kinoshita¹, Yuko Inatomi¹, Takao Tsukada², Keita abe², Sara Sumioka², Masaki Kubo² (1.JAXA, 2.Tohoku Univ.)

10:00 AM - 10:15 AM

[12a-D13-3] Growth of CaSi₂ single-phase polycrystalline ingots and the phase diagram of the Ca-Si binary system around CaSi₂

〇Ritsuko Yaokawa¹, Hideyuki Nakano^1,² (1.TOYOTA CENTRAL R&D LABS., 2.JST PRESTO)

10:15 AM - 10:30 AM

[12a-D13-4] Development of manufacturing technique of unworkable Ir alloy fiber by the micro-pulling-down method

〇Yuui Yokota¹, Muneki Nakamura², Kunihiro Tanaka², Koichi Sakairi², Shunsuke Kurosawa^1,³, Yuji Ohashi³, Kei Kamada^1,⁴, Akira Yoshikawa^1,^3,⁴ (1.NICHe, Tohoku Univ., 2.TKK, 3.IMR, Tohoku Univ., 4.C&A)

10:30 AM - 10:45 AM

[12a-D13-5] A Method for Evaluating Homogeneity of Ca₃Ta(Ga_0.5Al_0.5)₃Si₂O₁₄ Single Crystal by the Line-Focus-Beam Ultrasonic Material Characterization System

〇Yuji Ohashi¹, Tetsuo Kudo¹, Yuui Yokota², Yasuhiro Shoji³, Shunsuke Kurosawa^1,², Kei Kamada^2,³, Akira Yoshikawa^1,^2,³ (1.IMR, Tohoku Univ., 2.NICHe, Tohoku Univ., 3.C&A)

10:45 AM - 11:00 AM

▲ [12a-D13-6] Congruency and Liquid Immiscibility in Langasite-type Crystal with Four Elements

〇(DC)Hengyu Zhao¹, Jun Nozawa¹, Haruhiko Koizumi¹, Kozo Fujiwara¹, Satoshi Uda¹ (1.IMR, Tohoku Univ.,)

11:00 AM - 11:15 AM

[12a-D13-7] Oxygen Partitioning during Growth of Congruent Lithium Niobate

〇Satoshi Uda¹ (1.IMR, Tohoku Univ.)

11:15 AM - 11:30 AM

[12a-D13-8] Oxygen defect formation of impurity-doped lithium niobate by Ar-annealing

〇Chihiro Koyama¹, Jun Nozawa¹, Kozo Fujiwara¹, Satoshi Uda¹ (1.IMR, Tohoku Univ.)

11:30 AM - 11:45 AM

[12a-D13-9] Effects of Pr Doping and the Improvement of the Crystal growth of CeBr₃ Crystals by the Micro-Pulling-Down Method

〇Tomoki Ito¹, Yuui Yokota², Shunsuke Kurosawa^1,², Jan Pejchal^2,⁴, Yuji Ohashi¹, Kei Kamada^2,³, Akira Yoshikawa^1,^2,³ (1.IMR Tohoku Univ., 2.NICHe Tohoku Univ., 3.C&A Corp., 4.Inst. Physics ASCR)

Poster presentation

[12p-P14-1~3] 15.1 Bulk crystal growth

Thu. Mar 12, 2015 4:00 PM - 6:00 PM P14 (Gymnasium)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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4:00 PM - 6:00 PM

▲ [12p-P14-1] Thermoelectric properties of compositionally homogeneous p and n-type SiGe bulk crystals

〇Omprakash Muthusamy¹, Arivanandhan Mukannan¹, Tadanobu Koyama¹, Yoshimi Momose¹, Hiroya Ikeda¹, Hirokazu Tatsuoka¹, Yasunori Okano², Tetsuo Ozawa³, Yuko Inatomi⁴, Bhattacharya Shovit⁵, Aswal Dinesh⁵, MoorthyBabu Sridharan⁶, Yasuhiro Hayakawa¹ (1.RIE Shizuoka Univ, 2.Osaka Univ., 3.Shizuoka Insti Sci., 4.JAXA, 5.BARC, 6.Anna Univ)

4:00 PM - 6:00 PM

[12p-P14-2] Growth and Characterization of RuO₂ Single Crystals

〇Kazuhiro Yamaki¹, Yoshihiro Bamba¹, Akinobu Irie¹ (1.Utsunomiya Univ.)

4:00 PM - 6:00 PM

[12p-P14-3] Examination of Se addition effect for the growth of high quality AgGaSe₂ single crystal (II)

〇Masami Susaki¹ (1.OPUCT)

Oral presentation

[14a-D13-1~8] 15.1 Bulk crystal growth

Sat. Mar 14, 2015 10:00 AM - 12:00 PM D13 (16-502)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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10:00 AM - 10:15 AM

[14a-D13-1] The formation mechanism of W inclusions in VB-grown sapphire crystal

〇Kei Sugimoto¹, Toshinori Taishi², Keigo Hoshikawa¹ (1.Shinshu Univ. (eng), 2.Shinshu Univ.)

10:15 AM - 10:30 AM

[14a-D13-2] Microstructure of VB-Grown Al₂O₃/YAG:Ce-MGC

〇Seiya Yamada¹, Etsuko Ohba¹, Toshinori Taishi², Keigo Hoshikawa¹, Masafumi Yoshimura^1,³, Shinichi Sakata³ (1.Faculty of Engineering, Shinshu University, 2.Shinshu Univ., 3.Ube Industries Ltd.)

10:30 AM - 10:45 AM

▲ [14a-D13-3] Modeling basal plane dislocations in single-crystal sapphire by Alexander–Haasen model

〇Bing Gao¹, Koichi Kakimoto¹ (1.RIAM, Kyushu Univ.)

10:45 AM - 11:00 AM

▲ [14a-D13-4] Correlation study on heating profile and carbon contamination during the melting process of Czochralski silicon crystal growth

〇(P)Xin Liu¹, Bing Gao¹, Satoshi Nakano¹, Koichi Kakimoto¹ (1.RIAM, Kyushu Univ.)

11:00 AM - 11:15 AM

[14a-D13-5] Elucidation of Growth Mechanism for High Quality Protein Crystals under Application of an External Electric Field I

〇Haruhiko Koizumi¹, Satoshi Uda¹, Kozo Fujiwara¹, Masaru Tachibana², Kenichi Kojima³, Jun Nozawa¹ (1.IMR, Tohoku Univ., 2.Yokohama City Univ., 3.Yokohama Soei Univ.)

11:15 AM - 11:30 AM

[14a-D13-6] Impurity partitioning in charged colloidal crystallization

〇Jun Nozawa¹, Sumeng Hu¹, Haruhiko Koizumi¹, Kozo Fujiwara¹, Satoshi Uda¹ (1.IMR. Tohoku Univ.)

11:30 AM - 11:45 AM

▲ [14a-D13-7] Impurity Partitioning of Grain Boundary during Polycrystalline Colloidal

〇Sumeng Hu¹, Jun Nozawa¹, Koizumi Haruhiko¹, Fujiwara Kozo¹, Uda Satohi¹ (1.IMR. Tohoku Univ.)

11:45 AM - 12:00 PM

[14a-D13-8] Observations on silica colloidal crystals formed by sedimentation (II)

〇yoshimasa ohki¹, yuji nakano¹, satoshi kawanaka¹, fumio uchida¹ (1.Fuji Chemical)

Sessions

15 Crystal Engineering » 15.1 Bulk crystal growth

[12a-D13-1~9] 15.1 Bulk crystal growth

▲ [12a-D13-1] Properties of InGaSb crystals grown under μG at International Space Station and 1G conditions

[12a-D13-2] Homogeneous SiGe crystals grown by the TLZ method in microgravity condition

[12a-D13-3] Growth of CaSi₂ single-phase polycrystalline ingots and the phase diagram of the Ca-Si binary system around CaSi₂

[12a-D13-4] Development of manufacturing technique of unworkable Ir alloy fiber by the micro-pulling-down method

[12a-D13-5] A Method for Evaluating Homogeneity of Ca₃Ta(Ga_0.5Al_0.5)₃Si₂O₁₄ Single Crystal by the Line-Focus-Beam Ultrasonic Material Characterization System

▲ [12a-D13-6] Congruency and Liquid Immiscibility in Langasite-type Crystal with Four Elements

[12a-D13-7] Oxygen Partitioning during Growth of Congruent Lithium Niobate

[12a-D13-8] Oxygen defect formation of impurity-doped lithium niobate by Ar-annealing

[12a-D13-9] Effects of Pr Doping and the Improvement of the Crystal growth of CeBr₃ Crystals by the Micro-Pulling-Down Method

[12p-P14-1~3] 15.1 Bulk crystal growth

▲ [12p-P14-1] Thermoelectric properties of compositionally homogeneous p and n-type SiGe bulk crystals

[12p-P14-2] Growth and Characterization of RuO₂ Single Crystals

[12p-P14-3] Examination of Se addition effect for the growth of high quality AgGaSe₂ single crystal (II)

[14a-D13-1~8] 15.1 Bulk crystal growth

[14a-D13-1] The formation mechanism of W inclusions in VB-grown sapphire crystal

[14a-D13-2] Microstructure of VB-Grown Al₂O₃/YAG:Ce-MGC

▲ [14a-D13-3] Modeling basal plane dislocations in single-crystal sapphire by Alexander–Haasen model

▲ [14a-D13-4] Correlation study on heating profile and carbon contamination during the melting process of Czochralski silicon crystal growth

[14a-D13-5] Elucidation of Growth Mechanism for High Quality Protein Crystals under Application of an External Electric Field I

[14a-D13-6] Impurity partitioning in charged colloidal crystallization

▲ [14a-D13-7] Impurity Partitioning of Grain Boundary during Polycrystalline Colloidal

[14a-D13-8] Observations on silica colloidal crystals formed by sedimentation (II)

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