InGaAs-HEMTs with Slant Field Plate Structures

Presentation information

Oral presentation

13 Semiconductors » 13.8 Compound and power electron devices and process technology

Wed. Mar 11, 2015 9:00 AM - 12:00 PM A21 (6A-213)

10:00 AM - 10:15 AM

〇Tomohiro Yoshida¹, Shinya Hatakeyama¹, Nana Yasukawa¹, Taiichi Otsuji¹, Tetsuya Suemitsu¹ (1.RIEC, Tohoku Univ.)

Keywords:InGaAs-HEMT,Field Plate,Break Down