Oral presentation

[11a-A21-1~11] 13.8 Compound and power electron devices and process technology

Wed. Mar 11, 2015 9:00 AM - 12:00 PM A21 (6A-213)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[11a-A21-1] Electrical Characteristics of Si/InGaP Heterojunctions for tandem solar cell application

〇Jianbo Liang¹, Li Chai¹, Shota Nishida¹, Naoteru Shigekawa¹ (1.Osaka City Univ.)

9:15 AM - 9:30 AM

[11a-A21-2] Device modeling of GaAsSb backward diodes on the basis of experimental evaluations and theoretical analysis

〇Kosuke Ono¹, Hisanari Fujita¹, Kaori Imori¹, Michihiko Suhara¹, Tsuyoshi Takahashi² (1.Tokyo Metro. Univ., 2.Fujitsu Lab.)

9:30 AM - 9:45 AM

[11a-A21-3] A Study on Process Damage during Fabrication of InSb HEMT

〇Takaomi Maeda¹, Daisuke Tsuji¹, Tatsuya Taketsuru¹, Sachie Fujikawa¹, Hiroki Fujishiro¹, Issei Watanabe², Yoshimi Yamashita², Akira Endoh², Shinsuke Hara², Akifumi Kasamatsu² (1.Tokyo Univ. of Science, 2.NICT)

9:45 AM - 10:00 AM

△ [11a-A21-4] AlGaAs/InGaAs HEMT with Atomic Layer Deposited SiO₂ using Bis(ethyl-methyl-amino)silane

〇Takayuki Suzuki¹, Yosuke Takigawa¹, Dongyan Zhang¹, Shimako Naito¹, Naotaka Iwata¹ (1.Toyota Tech. Inst.)

10:00 AM - 10:15 AM

△ [11a-A21-5] InGaAs-HEMTs with Slant Field Plate Structures

〇Tomohiro Yoshida¹, Shinya Hatakeyama¹, Nana Yasukawa¹, Taiichi Otsuji¹, Tetsuya Suemitsu¹ (1.RIEC, Tohoku Univ.)

Break （10:15 AM - 10:30 AM）

10:30 AM - 10:45 AM

[11a-A21-6] Reduction effect of metal subcollector on thermal resistance for transferred-substrate InP HBTs

〇Yuta Shiratori^1,², Takuya Hoshi^1,², Norihide Kashio^1,³, Kenji Kurishima^1,², Eiji Higurashi⁴, Hideaki Matsuzaki^1,² (1.NTT Corp., 2.NTT Device Technology Labs., 3.NTT Device Innovation Center, 4.Univ. of Tokyo)

10:45 AM - 11:00 AM

[11a-A21-7] InP-based Double Heterojunction Bipolar Transistors Fabricated on SiC wafer by Atomic Diffusion Bonding Method

〇Masataka Watanabe¹, Masaki Yanagisawa¹, Katsumi Uesaka¹, Mitsuru Ekawa¹, Hajime Shoji¹ (1.Sumitomo Electric Industries)

11:00 AM - 11:15 AM

△ [11a-A21-8] Analysis of Charge Density Instability in SiC-PN Diodes by measuring capacitance

〇Hiroyuki Matsushima¹, Hiroyuki Okino¹, Kazuhiro Mochizuki¹, Renichi Yamada¹ (1.Hitachi CRL)

11:15 AM - 11:30 AM

[11a-A21-9] Interface Characterization of 4H-SiC MOSFETs by Pulse I-V Measurements

〇KOSUKE ISONO¹, HIROSHI YANO^1,², TAKASHI FUYUKI¹ (1.NAIST, 2.Univ. Tsukuba)

11:30 AM - 11:45 AM

△ [11a-A21-10] Demonstrate of a Low On-resistance 6.5kV PiN Diode Fabricated on a SiC Substrate with p+ epitaxial layer

〇Yuan Bu¹, Norifumi Kameshiro¹, Akio Shima¹, Ren-ichi Yamada¹, Yasuhiro Shimamoto¹ (1.Hitachi Ltd.)

11:45 AM - 12:00 PM

[11a-A21-11] High Accuracy Equivalent Circuit Model for GIT Bi-directional Switch

〇Toshihide Ide¹, Mitsuaki Shimizu¹, Xu-Qiang Shen¹, Tatsuo Morita², Nobuyuki Otsuka², Tetsuzo Ueda² (1.AIST ADPERC, 2.Panasonic)

Oral presentation

[11p-A21-1~12] 13.8 Compound and power electron devices and process technology

Wed. Mar 11, 2015 2:00 PM - 5:15 PM A21 (6A-213)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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2:00 PM - 2:15 PM

[11p-A21-1] Ohmic Electrode Formation for Diamond Semiconductors Using Ar Ion Beam Irradiation

〇Yuhei Seki¹, Yasusi Hoshino¹, Yasunao Saito¹, Jyoji Nakata¹ (1.Kanagawa Univ.)

2:15 PM - 2:30 PM

[11p-A21-2] Surface Orientation Dependence of Crystalline Al₂O₃ Layer on (-201) and (010) Ga₂O₃

〇Takafumi Kamimura¹, Daivasigamani Krishnamurthy¹, Akito Kuramata², Shigenobu Yamakoshi², Masataka Higashiwaki¹ (1.NICT, 2.Tamura Corp.)

2:30 PM - 2:45 PM

[11p-A21-3] Correlation between Al₂O₃ Crystalline Layer Thickness Deposited on (010) Ga₂O₃and Its Interface State Density

〇Takafumi Kamimura¹, Daivasigamani Krishnamurthy¹, Akito Kuramata², Shigenobu Yamakoshi², Masataka Higashiwaki¹ (1.NICT, 2.Tamura Corp.)

2:45 PM - 3:00 PM

▲ [11p-A21-4] Planar Device Isolation for β-Ga₂O₃ Field Effect Transistors

〇ManHoi Wong¹, Kohei Sasaki^{2, 1}, Akito Kuramata², Shigenobu Yamakoshi², Masataka Higashiwaki¹ (1.NICT, 2.Tamura Corp.)

3:00 PM - 3:15 PM

[11p-A21-5] Comparison of Etched AlGaN Surface between Neutral Beam Etching and Plasma Etching

〇ChangYong Lee¹, Aiko Higo², Cedric Thomas¹, Tadashi Shimmura³, Seiji Samukawa^1,^2,⁴ (1.IFS, Tohoku Univ., 2.WPI-AIMR, Tohoku Univ., 3.PRC, Toshiba, 4.JST-CREST)

3:15 PM - 3:30 PM

[11p-A21-6] Recess-Gate AlGaN/GaN HEMT Structure by Neutral Beam Etching

〇ChangYong Lee¹, Akio Higo², Jitsuo Ohta³, Hiroshi Fujioka^3,⁴, Seiji Samukawa^1,^2,⁴ (1.IFS, Tohoku Univ., 2.WPI-AIMR, Tohoku Univ., 3.IIS, Univ. of Tokyo, 4.JST-CREST)

Break （3:30 PM - 3:45 PM）

3:45 PM - 4:00 PM

[11p-A21-7] Temperature dependence on behavior of plasma-induced defects in n-GaN upon light irradiation

〇rikito orimo¹ (1.TMU)

4:00 PM - 4:15 PM

[11p-A21-8] ODLTS of the Ev+0.86eV hole trap observed in MOCVD n-GaN

〇(M1)Kazuki Miyamoto¹, Yutaka Tokuda¹ (1.Aichi Inst. of Technol.)

4:15 PM - 4:30 PM

[11p-A21-9] Fabrication of ultra-thin nanostructures by Hydrogen Environment Anisotropic Thermal Etching

〇(M2)Ryo Kita¹, Hachia Ryo¹, Akihiko Kikuchi^1,² (1.Sophia Univ., 2.Sophia Nanotech.)

4:30 PM - 4:45 PM

[11p-A21-10] Electrical properties of AlGaN/GaN heterostructures grown on a step-etched substrate

〇(DC)Shintaro Kodama¹, Joel Asubar¹, Hirokuni Tokuda¹, Satoshi Nakazawa², Masahiro Ishida², Tetsuzo Ueda², Masaaki Kuzuhara¹ (1.Univ. of Fukui, 2.Panasonic)

4:45 PM - 5:00 PM

[11p-A21-11] Improvement of DC characteristics of AlGaN/GaN HEMT by substrate transfer using Au-Au thermocompression bonding

〇Masanobu Hiroki¹, Kazuhide Kumakura¹, Hideki Yamamoto¹ (1.NTT BRL)

5:00 PM - 5:15 PM

[11p-A21-12] High Temperature Characteristics in AlGaN/GaN Asymmetric Open-Gate HFET with Recessed-Gate Enhanced-Barrier Structures

〇Narihiko Maeda^1,², Masanobu Hiroki², Satoshi Sasaki², Yuichi Harada² (1.Tokyo Univ. of Technology, 2.NTT Research Labs.)

Oral presentation

[12a-A21-1~13] 13.8 Compound and power electron devices and process technology

Thu. Mar 12, 2015 9:00 AM - 12:30 PM A21 (6A-213)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[12a-A21-1] Conduction mechanism of gate leakage current in AlTiO/InAlN/AlN/GaN metal-insulator-semiconductor field-effect transistor

〇Jiqing Liang¹, Toshimasa Ui¹, Hong-An Shih¹, Shinya Yamaguchi¹, Toshi-kazu Suzuki¹ (1.JAIST)

9:15 AM - 9:30 AM

[12a-A21-2] Influence of gate metal electrode on leakage current for AlGaN/GaN HEMT

〇kazuki ohga¹, Takamasa Kawanago², Kuniyuki Kakushima², Yoshinori Kataoka², Akira Nishiyama², Nobuyuki Sugii², Hitoshi Wakabayashi², Kazuo Tsutsui², Kenji Natori¹, Hiroshi Iwai¹ (1.Tokyo Tech. FRC, 2.Tokyo Tech. IGSSE)

9:30 AM - 9:45 AM

△ [12a-A21-3] Mapping of degradation of AlGaN/GaN HEMTs using scanning internal photoemission microscopy

〇Shingo Yamamoto¹, Shinya Hatakeyama², Tetsuya Suemitsu², Kenji Shiojima¹ (1.Univ. of Fukui, 2.Tohoku Univ.)

9:45 AM - 10:00 AM

[12a-A21-4] Mapping of crystalline of ion-implanted n-GaN Schottky contacts using scanning internal photoemission microscopy

〇Shingo Yamamoto¹, Shingo Murase¹, Takeshi Tanaka^1,², Tomoyoshi Mishima², Toru Nakamura³, Kenji Shiojima¹ (1.Univ. of Fukui, 2.Hitachi Metal, 3.Hosei Univ.)

10:00 AM - 10:15 AM

△ [12a-A21-5] Characterization of n-GaN Schottky diodes on cleaved surfaces of free-standing substrates

〇Moe Naganawa¹, Toshichika Aoki¹, Takehiro Yoshida², Tomoyoshi Mishima^2,³, Kenji Shiojima¹ (1.Univ. of Fukui, 2.Hitachi Metal, 3.Hosei Univ.)

10:15 AM - 10:30 AM

△ [12a-A21-6] Edge effect of anode electrode on forward characteristics of GaN schottky barrier diodes

〇daichi yoshikawa¹, yutarou yamaguchi², koji yamanaka², toshiyuki oishi¹ (1.Saga Univ., 2.Mitsubishi Electric.)

10:30 AM - 10:45 AM

△ [12a-A21-7] Analysis of parasitic resistance of GaN Schottky Barrier Diodes using three-terminal structure.

〇syuzo yamaguchi¹, yutaro yamaguchi², yamanaka kouzi², oishi toshiyuki¹ (1.Saga Univ., 2.Mitsubishi Electric)

Break （10:45 AM - 11:00 AM）

11:00 AM - 11:15 AM

[12a-A21-8] Electrical characteristics of N-polar p-type GaN Schottky contacts

〇Toshichika Aoki¹, Tomoyuki Tanikawa², Ryuji Katayama², Takashi Matsuoka², Kenji Shiojima¹ (1.Univ. of Fukui, 2.IMR, Tohoku Univ.)

11:15 AM - 11:30 AM

[12a-A21-9] Evaluation of 2DEG and polarization in AlGaN/GaN structure using scanning nonlinear dielectric microscopy

〇Kotaro Hirose¹, Norimichi Chinone¹, Yasuo Cho¹ (1.RIEC. Tohoku Univ.)

11:30 AM - 11:45 AM

[12a-A21-10] Activation of Implanted Si in GaN by Local Laser Annealing

〇(M1)Takaya Nagai¹, Akio Wakejima¹, Takashi Egawa¹, Tomoya Hirata², Satoshi Ando², Katsuhiko Tani² (1.Nagoya Inst. of Tech., 2.Y.A.C. Phoeton)

11:45 AM - 12:00 PM

△ [12a-A21-11] In situ Photoemission Study of Interface Reaction in Al/Ti/n-GaN Structures

〇Joyo Ito¹, Ryohei Asahara¹, Mikito Nozaki¹, Satoshi Nakazawa², Masahiro Ishida², Tetsuzo Ueda², Akitaka Yoshigoe³, Yuden Teraoka³, Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ., 2.Panasonic, 3.JAEA)

12:00 PM - 12:15 PM

[12a-A21-12] Reduction of contact resistance on AlGaN/GaN HEMT structures by introducing uneven AlGaN layers

〇Yusuke Takei¹, Shimoda Tomohiro¹, Kazuo Tsutsui¹, Wataru Saito², Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Yoshinori Kataoka¹, Hiroshi Iwai¹ (1.Tokyo Inst. Technol., 2.Toshiba)

12:15 PM - 12:30 PM

[12a-A21-13] Ohmic Contact Resistivity of δ-doped GaN Cap/AlGaN/GaN Heterostructure

〇(B)Naoki Kato¹, Akihiro Ando¹, Akio Wakejima¹, Takashi Egawa¹, Yamato Osada², Ryuichiro Kamimura² (1.Nagoya Inst. of Tech., 2.ULVAC)

Oral presentation

[12p-A21-1~13] 13.8 Compound and power electron devices and process technology

Thu. Mar 12, 2015 2:00 PM - 5:30 PM A21 (6A-213)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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2:00 PM - 2:15 PM

[12p-A21-1] AlGaN/GaN MOSFETs with Superlattice Cap Layer

〇Yoshiharu Anda¹, Nanako Shiozaki¹, Noboru Negoro¹, Satoshi Nakazawa¹, Naohiro Tsurumi¹, Masahiro Ishida¹, Tetsuzo Ueda¹ (1.Panasonic Corporation)

2:15 PM - 2:30 PM

[12p-A21-2] Normally-off type AlGaN/GaN MOSFETs with Regrown Recessed-gate Structures

〇Satoshi Nakazawa¹, Nanako Shiozaki¹, Noboru Negoro¹, Naohiro Tsurumi¹, Yoshiharu Anda¹, Masahiro Ishida¹, Tetsuzo Ueda¹ (1.Panasonic Corporation)

2:30 PM - 2:45 PM

△ [12p-A21-3] Effects of oxygen annealing process on GaN MOS interface properties

〇Joji Ohira¹, Yutaka Senzaki¹, Zenji Yatabe^1,², Tamotsu Hashizume^1,² (1.RCIQE, Hokkaido Univ., 2.JST-CREST)

2:45 PM - 3:00 PM

[12p-A21-4] Temperature dependence of interfacial charge on n-GaN MOS capacitors

〇Shinya Takashima¹, Katsunori Ueno¹, Masaharu Edo¹, T.Paul Chow² (1.Fuji Electric, 2.RPI)

3:00 PM - 3:15 PM

△ [12p-A21-5] Normally-off P-channel AlGaN/GaN HFET by introducing MOS gate structure

〇Shunsuke Kubota¹, Rei Kayanuma¹, Akira Nakajima³, Shin-ichi Nishizawa³, Hiromichi Ohashi^2,³, Kazuo Tsutsui¹, Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Hiroshi Iwai² (1.Tokyo Tech. IGSSE, 2.Tokyo Tech. FRC, 3.AIST)

3:15 PM - 3:30 PM

[12p-A21-6] Electrical characteristics of MIS-HEMT using HfO₂ deposited by ALD on AlGaN

〇Gosuke Nishino¹, Yusuke Yoshida¹, Toshiharu Kubo¹, Makoto Miyoshi¹, Takashi Egawa¹ (1.Nagoya Institute of Technology)

Break （3:30 PM - 3:45 PM）

3:45 PM - 4:00 PM

△ [12p-A21-7] Analysis of bulk traps in AlGaN layer of AlGaN/GaN HEMT

〇(M1)TOSHIYUKI BABA¹, YUICHI NAGAHISA², TAKAMASA KAWANAGO², KUNIYUKI KAKUSHIMA², YOSHINORI KATAOKA², AKIRA NISHIYAMA², NOBUYUKI SUGII², HITOSHI WAKABAYASHI², KAZUO TSUTSUI², KENZI NATORI¹, HIROSHI IWAI¹ (1.Tokyo Tech. FRC, 2.Tokyo Tech. IGSSE)

4:00 PM - 4:15 PM

[12p-A21-8] Modeling of traps in GaN HEMT by measurement of low frequency impedance

〇Yutaro Yamaguchi¹, Hiroshi Otsuka¹, Hidetoshi Koyama¹, Yoshitaka Kamo¹, Nanjo Takuma¹, Koji Yamanaka¹, Toshiyuki Oishi² (1.Mitsubishi Electric corp., 2.Saga Univ.)

4:15 PM - 4:30 PM

[12p-A21-9] GaN HEMT Drain-Lag Performance Dependence on GaN Channel Quality

〇Youichi Kamada¹, Naoya Okamoto¹, Masaru Sato¹, Atsushi Yamada¹, Junji Kotani¹, Tetsuro Ishiguro¹, Toshihiro Ohki¹, Shirou Ozaki¹, Yoshitaka Niida¹, Kozo Makiyama¹, Keiji Watanabe¹, Kazukiyo Joshin¹ (1.Fujitsu Laboratories Ltd.)

4:30 PM - 4:45 PM

△ [12p-A21-10] Evaluation of Surface charging in AlGaN/GaN HEMTs induced by off-stress bias

〇Kenya Nishiguchi¹, Tamotsu Hashizume^1,² (1.RCIQE, 2.JST-CREST)

4:45 PM - 5:00 PM

[12p-A21-11] Suppressed Current Collapse in AlGaN/GaN HEMTs by High Pressure Water Vapor Annealing

Yohei Kobayashi¹, 〇Joel Asubar¹, Koji Yoshitsugu², Zenji Yatabe³, Hirokuni Tokuda¹, Masahiro Horita², Yukiharu Uraoka², Tamotsu Hashizume³, Masaaki Kuzuhara¹ (1.Univ. of Fukui, 2.Graduate School of Materials Science Nara Institute of Science and Technology, 3.RCIQE Hokkaido Univ.)

5:00 PM - 5:15 PM

[12p-A21-12] Correlation between Electroluminescence and Current Collapse in AlGaN/GaN HEMTs

〇(M1)shintaro ohi¹, Yoshiki Sakaida¹, Joel Asubar¹, Hirokuni Tokuda¹, Masaaki Kuzuhara¹ (1.Fukui Univ.)

5:15 PM - 5:30 PM

[12p-A21-13] Improved Current Collapse in AlGaN/GaN HEMTs with 3-Dimensional Field Plate Structure

〇atsuya suzuki¹, Kosuke Akira¹, Joel Asubar¹, Hirokuni Tokuda¹, Masaaki Kuzuhara¹ (1.Fukui Univ.)

Poster presentation

[13p-P17-1~24] 13.8 Compound and power electron devices and process technology

Fri. Mar 13, 2015 4:30 PM - 6:30 PM P17 (Gymnasium)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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4:30 PM - 6:30 PM

△ [13p-P17-1] MOCVD of GaAsSb/InGaAsSb-base DHBTs with highly-doped GaAsSb contact layer

〇Takuya Hoshi¹, Kashio Norihide², Sugiyama Hiroki¹, Yokoyama Haruki¹, Kurishima Kenji¹, Ida Minoru¹, Matsuzaki Hideaki¹ (1.NTT Device Technology Labs., 2.NTT Device Innovation Center)

4:30 PM - 6:30 PM

[13p-P17-2] The effects of holes accumulated at the source region on characteristics of InAs-PHEMTs

〇Tatsuhiro Komatsu¹, Yui Nishio¹, Marie Sato¹, Takato Sato¹, Shunsuke Sugiyama¹, Yoshifumi Takanashi¹ (1.TUS)

4:30 PM - 6:30 PM

[13p-P17-3] The I-V characteristics of th IPG devices

〇sho sakamoto¹, kouzi onomitu², hideki yamamoto², yosiji horikosi¹, tosiki makimoto¹ (1.Waseda Univ., 2.NTT BRL)

4:30 PM - 6:30 PM

△ [13p-P17-4] Double barrier p-i-n junction diode for Superlattice FET

〇Atsushi Yukimachi¹, Masashi Kashiwano¹, Yasuyuki Miyamoto¹ (1.Tokyo Tech.)

4:30 PM - 6:30 PM

[13p-P17-5] Characterization of nearly-lattice-matched InAlN/AlGaN HEMTs

〇Shu Fujita¹, Makoto Miyoshi¹, Takashi Egawa¹ (1.Nagoya Inst. of Tech.)

4:30 PM - 6:30 PM

[13p-P17-6] Degradation Mechanism of Bistability Characteristics of GaN/AlN Resonant Tunneling Diodes

〇Masanori Nagase¹, Tokio Takahashi¹, Mitsuaki Shimizu¹ (1.AIST)

4:30 PM - 6:30 PM

△ [13p-P17-7] Impact on Drain Depletion Region in InAlN/GaN HEMTs with Slant Field Plates

〇Nana Yasukawa¹, Shinya Hatakeyama¹, Tomohiro Yoshida¹, Taiichi Otsuji¹, Tetsuya Suemitsu¹ (1.RIEC Tohoku Univ.)

4:30 PM - 6:30 PM

[13p-P17-8] Pulsed I-V characteristics of AlGaN/GaN HEMTs with bias controllable Field Plate

〇Suguru Mase¹, Takashi Egawa¹, Akio Wakejima¹ (1.Nagoya Inst. of Tech.)

4:30 PM - 6:30 PM

[13p-P17-9] Continuous Current Characteristics of GaN Polarization Super Junction (PSJ) Transistors on Sapphire substrate

〇Sota Matsumoto¹, Shoko Hirata¹, Fumihiko Nakamura¹, Takeru Saito¹, Keiichi Ichimaru¹, Syuichi Yagi¹, Hiroji Kawai¹ (1.POWDEC K.K.)

4:30 PM - 6:30 PM

[13p-P17-10] Normally-off GaN-PSJ FETs

〇Shoko Hirata¹, Sota Matsumoto¹, Keiichi Ichimaru¹, Takeru Saito¹, Shuichi Yagi¹, Humihiko Nakamura¹, Hiroji Kawai¹ (1.POWDEC K.K.)

4:30 PM - 6:30 PM

[13p-P17-11] Fabrication of GaN Varactor Diode

Tokio Takahashi¹, Yuichi Sakamura¹, Hiroshi Chonan¹, Maki Kiuchi¹, Toshihide Ide¹, Xu-Qiang Shen¹, 〇Mitsuaki Shimizu¹, Taro Itatani¹, Masao Shimada² (1.AIST, 2.RF Dev. Techn.)

4:30 PM - 6:30 PM

△ [13p-P17-12] Monolithic power integrated circuit on GaN-based Polarization-Junction platform

〇Rei Kayanuma¹, Shunsuke Kubota¹, Akira Nakajima³, Shin-ichi Nishizawa³, Hiromichi Ohashi^2,³, Kazuo Tsutsui¹, Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Hiroshi Iwai² (1.Tokyo Tech. IGSSE, 2.Tokyo Tech. FRC, 3.AIST)

4:30 PM - 6:30 PM

[13p-P17-13] Admittance spectroscopy of Fe-doped MOCVD n-GaN Schottky diodes

〇Shougo Ueda¹ (1.Aichi Inst. of Tecnol.)

4:30 PM - 6:30 PM

[13p-P17-14] Electrical Characterization of MOCVD-GaN:Si films with Ar⁺ Ion Bombardment

〇Yoshitaka Nakano¹, Kenji Takagi¹, Daisuke Ogawa¹, Keiji Nakamura¹, Niibe Masahito², Retsuo Kawakami³ (1.Chubu Univ., 2.Univ. Hyogo, 3.Univ. Tokushima)

4:30 PM - 6:30 PM

[13p-P17-15] Electrical Characterization of AlGaN/GaN Hetero-Structures Treated by CF₄ Plasma

〇Yoshitaka Nakano¹, Retsuo Kawakami², Masahito Niibe³, Kenji Takagi¹, Tatsuo Shirahama², Takashi Mukai⁴ (1.Chubu Univ., 2.Univ. Tokushima, 3.Univ. Hyogo, 4.Nichia Corp.)

4:30 PM - 6:30 PM

[13p-P17-16] Effects of dry etching on Al₂O₃/AlGaN/GaN MOS interface properties

〇Zenji Yatabe^1,², Joji Ohira¹, Taketomo Sato¹, Tamotsu Hashizume^1,² (1.RCIQE, Hokkaido Univ., 2.JST-CREST)

4:30 PM - 6:30 PM

[13p-P17-17] MOS characteristics of SiO₂ deposited by plasma CVD on n-GaN substrate

〇Katsunori Ueno¹, Shinya Takashima¹, Hideaki Matsuyama¹, Masaharu Edo¹, Kiyokazu Nakagawa² (1.Fuji Electric, 2.Univ. Yamanashi)

4:30 PM - 6:30 PM

[13p-P17-18] Process Dependence of Al₂O₃/InAlN Interface Properties

〇Masahito Chiba¹, Masamichi Akazawa¹ (1.Hokkaido Univ. RCIQE)

4:30 PM - 6:30 PM

[13p-P17-19] Regrowth Process for Normally-off GaN MOSFET

〇Keita Inoue¹, Tomotaka Narita¹, Akio Wakejima¹, Takashi Egawa¹ (1.Nagoya Inst.)

4:30 PM - 6:30 PM

[13p-P17-20] Effect of epitaxial layer in local gate leakage of AlGaN/GaN HEMTs

〇Tomotaka Narita¹, Yuichi Fujimoto¹, Akio Wakejima¹, Takashi Egawa¹ (1.Nagoya Inst. of Tech.)

4:30 PM - 6:30 PM

[13p-P17-21] Influence of surface morphology on breakdown voltage in AlGaN/GaN HEMT structure on GaN substrate

〇Shinichi Tanabe¹, Noriyuki Watanabe¹, Masahiro Uchida², Hideaki Matsuzaki¹ (1.NTT Device Technology Labs., 2.NTT-AT)

4:30 PM - 6:30 PM

△ [13p-P17-22] Evaluation of n⁺-Si/n-GaN contacts using surface activated bonding

〇(B)takuya nishimura¹, jianbo liang¹, noriyuki watanabe², naoteru shigekawa¹ (1.Oska City Univ., 2.NTT Labs.)

4:30 PM - 6:30 PM

[13p-P17-23] Low resistance ohmic contact on AlGaN/GaN heterostructures grown on GaN substrate

〇Daryoush H. Zadeh¹, Shinichi Tanabe¹, Noriyuki Watanabe¹, Hideaki Matsuzaki¹ (1.NTT Dev. Tech. Labs.)

4:30 PM - 6:30 PM

[13p-P17-24] Uneven structure patterns dependence on reduction of contact resistance formation on AlGaN/GaN high electron mobility transistors by introducing uneven AlGaN layers

〇Tomohiro Shimoda¹, Yusuke Takei¹, Kazuo Tsutsui¹, Wataru Saito², Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Yoshinori Kataoka¹, Hiroshi Iwai¹ (1.Tokyo Inst. Technol, 2.Toshiba)

Sessions

13 Semiconductors » 13.8 Compound and power electron devices and process technology

[11a-A21-1~11] 13.8 Compound and power electron devices and process technology

△ [11a-A21-4] AlGaAs/InGaAs HEMT with Atomic Layer Deposited SiO2 using Bis(ethyl-methyl-amino)silane

△ [11a-A21-5] InGaAs-HEMTs with Slant Field Plate Structures

△ [11a-A21-8] Analysis of Charge Density Instability in SiC-PN Diodes by measuring capacitance

△ [11a-A21-10] Demonstrate of a Low On-resistance 6.5kV PiN Diode Fabricated on a SiC Substrate with p+ epitaxial layer

[11p-A21-1~12] 13.8 Compound and power electron devices and process technology

▲ [11p-A21-4] Planar Device Isolation for β-Ga2O3 Field Effect Transistors

[12a-A21-1~13] 13.8 Compound and power electron devices and process technology

△ [12a-A21-3] Mapping of degradation of AlGaN/GaN HEMTs using scanning internal photoemission microscopy

△ [12a-A21-5] Characterization of n-GaN Schottky diodes on cleaved surfaces of free-standing substrates

△ [12a-A21-6] Edge effect of anode electrode on forward characteristics of GaN schottky barrier diodes

△ [12a-A21-7] Analysis of parasitic resistance of GaN Schottky Barrier Diodes using three-terminal structure.

△ [12a-A21-11] In situ Photoemission Study of Interface Reaction in Al/Ti/n-GaN Structures

[12p-A21-1~13] 13.8 Compound and power electron devices and process technology

△ [12p-A21-3] Effects of oxygen annealing process on GaN MOS interface properties

△ [12p-A21-5] Normally-off P-channel AlGaN/GaN HFET by introducing MOS gate structure

△ [12p-A21-7] Analysis of bulk traps in AlGaN layer of AlGaN/GaN HEMT

△ [12p-A21-10] Evaluation of Surface charging in AlGaN/GaN HEMTs induced by off-stress bias

[13p-P17-1~24] 13.8 Compound and power electron devices and process technology

△ [13p-P17-1] MOCVD of GaAsSb/InGaAsSb-base DHBTs with highly-doped GaAsSb contact layer

△ [13p-P17-4] Double barrier p-i-n junction diode for Superlattice FET

△ [13p-P17-7] Impact on Drain Depletion Region in InAlN/GaN HEMTs with Slant Field Plates

△ [13p-P17-12] Monolithic power integrated circuit on GaN-based Polarization-Junction platform

△ [13p-P17-22] Evaluation of n+-Si/n-GaN contacts using surface activated bonding

Authentication

△ [11a-A21-4] AlGaAs/InGaAs HEMT with Atomic Layer Deposited SiO₂ using Bis(ethyl-methyl-amino)silane

▲ [11p-A21-4] Planar Device Isolation for β-Ga₂O₃ Field Effect Transistors

△ [13p-P17-22] Evaluation of n⁺-Si/n-GaN contacts using surface activated bonding