[12p-A21-1~13] 13.8 Compound and power electron devices and process technology

[12p-A21-1] AlGaN/GaN MOSFETs with Superlattice Cap Layer

〇Yoshiharu Anda¹, Nanako Shiozaki¹, Noboru Negoro¹, Satoshi Nakazawa¹, Naohiro Tsurumi¹, Masahiro Ishida¹, Tetsuzo Ueda¹ (1.Panasonic Corporation)

Keywords:GaN