The 62nd JSAP Spring Meeting, 2015

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13 Semiconductors » 13.8 Compound and power electron devices and process technology

[11p-A21-1~12] 13.8 Compound and power electron devices and process technology

Wed. Mar 11, 2015 2:00 PM - 5:15 PM A21 (6A-213)

2:30 PM - 2:45 PM

[11p-A21-3] Correlation between Al2O3 Crystalline Layer Thickness Deposited on (010) Ga2O3 and Its Interface State Density

〇Takafumi Kamimura1, Daivasigamani Krishnamurthy1, Akito Kuramata2, Shigenobu Yamakoshi2, Masataka Higashiwaki1 (1.NICT, 2.Tamura Corp.)

Keywords:Gallium Oxide,Interface state density,Atomic layer deposition