[12a-A21-1~13] 13.8 Compound and power electron devices and process technology

△ [12a-A21-5] Characterization of n-GaN Schottky diodes on cleaved surfaces of free-standing substrates

〇Moe Naganawa¹, Toshichika Aoki¹, Takehiro Yoshida², Tomoyoshi Mishima^{2, 3}, Kenji Shiojima¹ (1.Univ. of Fukui, 2.Hitachi Metal, 3.Hosei Univ.)

Keywords:cleaved surface,n-GaN Schottky contact,m-plane