[12p-A21-1~13] 13.8 Compound and power electron devices and process technology

[12p-A21-8] Modeling of traps in GaN HEMT by measurement of low frequency impedance

〇Yutaro Yamaguchi¹, Hiroshi Otsuka¹, Hidetoshi Koyama¹, Yoshitaka Kamo¹, Nanjo Takuma¹, Koji Yamanaka¹, Toshiyuki Oishi² (1.Mitsubishi Electric corp., 2.Saga Univ.)

Keywords:GaN,HEMT,Trap