[13p-P17-1~24] 13.8 Compound and power electron devices and process technology

△ [13p-P17-1] MOCVD of GaAsSb/InGaAsSb-base DHBTs with highly-doped GaAsSb contact layer

〇Takuya Hoshi¹, Kashio Norihide², Sugiyama Hiroki¹, Yokoyama Haruki¹, Kurishima Kenji¹, Ida Minoru¹, Matsuzaki Hideaki¹ (1.NTT Device Technology Labs., 2.NTT Device Innovation Center)

Keywords:Heterojunction Bipolar Transistor,InGaAsSb,Metalorganic Chemical Vapor Deposition