[13p-P17-1~24] 13.8 Compound and power electron devices and process technology

[13p-P17-2] The effects of holes accumulated at the source region on characteristics of InAs-PHEMTs

〇Tatsuhiro Komatsu¹, Yui Nishio¹, Marie Sato¹, Takato Sato¹, Shunsuke Sugiyama¹, Yoshifumi Takanashi¹ (1.TUS)

Keywords:HEMT,InAs