4:30 PM - 6:30 PM
[13p-P17-6] Degradation Mechanism of Bistability Characteristics of GaN/AlN Resonant Tunneling Diodes
Keywords:resonant tunneling diode,nitride semiconductor,MOVPE
Presentation information
Poster presentation
13 Semiconductors » 13.8 Compound and power electron devices and process technology
[13p-P17-1~24] 13.8 Compound and power electron devices and process technology
Fri. Mar 13, 2015 4:30 PM - 6:30 PM P17 (Gymnasium)