The 62nd JSAP Spring Meeting, 2015

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Poster presentation

13 Semiconductors » 13.8 Compound and power electron devices and process technology

[13p-P17-1~24] 13.8 Compound and power electron devices and process technology

Fri. Mar 13, 2015 4:30 PM - 6:30 PM P17 (Gymnasium)

4:30 PM - 6:30 PM

[13p-P17-14] Electrical Characterization of MOCVD-GaN:Si films with Ar+ Ion Bombardment

〇Yoshitaka Nakano1, Kenji Takagi1, Daisuke Ogawa1, Keiji Nakamura1, Niibe Masahito2, Retsuo Kawakami3 (1.Chubu Univ., 2.Univ. Hyogo, 3.Univ. Tokushima)

Keywords:GaN,Ion Bombardment,Deep-Level Defects