[12a-A21-1~13] 13.8 Compound and power electron devices and process technology

[12a-A21-8] Electrical characteristics of N-polar p-type GaN Schottky contacts

〇Toshichika Aoki¹, Tomoyuki Tanikawa², Ryuji Katayama², Takashi Matsuoka², Kenji Shiojima¹ (1.Univ. of Fukui, 2.IMR, Tohoku Univ.)

Keywords:N-polar p-type GaN,Schottky contact,Schottky barrier height