[11a-A21-1~11] 13.8 Compound and power electron devices and process technology

△ [11a-A21-8] Analysis of Charge Density Instability in SiC-PN Diodes by measuring capacitance

〇Hiroyuki Matsushima¹, Hiroyuki Okino¹, Kazuhiro Mochizuki¹, Renichi Yamada¹ (1.Hitachi CRL)

Keywords:SiC,termination,capacitance measurment