The 62nd JSAP Spring Meeting, 2015

Presentation information

Oral presentation

13 Semiconductors » 13.8 Compound and power electron devices and process technology

[11p-A21-1~12] 13.8 Compound and power electron devices and process technology

Wed. Mar 11, 2015 2:00 PM - 5:15 PM A21 (6A-213)

4:45 PM - 5:00 PM

[11p-A21-11] Improvement of DC characteristics of AlGaN/GaN HEMT by substrate transfer using Au-Au thermocompression bonding

〇Masanobu Hiroki1, Kazuhide Kumakura1, Hideki Yamamoto1 (1.NTT BRL)

Keywords:GaN,HEMT,h-BN