The 62nd JSAP Spring Meeting, 2015

Presentation information

Poster presentation

13 Semiconductors » 13.8 Compound and power electron devices and process technology

[13p-P17-1~24] 13.8 Compound and power electron devices and process technology

Fri. Mar 13, 2015 4:30 PM - 6:30 PM P17 (Gymnasium)

4:30 PM - 6:30 PM

[13p-P17-4] Double barrier p-i-n junction diode for Superlattice FET

〇Atsushi Yukimachi1, Masashi Kashiwano1, Yasuyuki Miyamoto1 (1.Tokyo Tech.)

Keywords:superlattice FET