[12a-A21-1~13] 13.8 Compound and power electron devices and process technology

[12a-A21-1] Conduction mechanism of gate leakage current in AlTiO/InAlN/AlN/GaN metal-insulator-semiconductor field-effect transistor

〇Jiqing Liang¹, Toshimasa Ui¹, Hong-An Shih¹, Shinya Yamaguchi¹, Toshi-kazu Suzuki¹ (1.JAIST)

Keywords:InAlN-GaN,AlTiO,Poole-Frenkel conduction