[11a-A21-1~11] 13.8 Compound and power electron devices and process technology

[11a-A21-3] A Study on Process Damage during Fabrication of InSb HEMT

〇Takaomi Maeda¹, Daisuke Tsuji¹, Tatsuya Taketsuru¹, Sachie Fujikawa¹, Hiroki Fujishiro¹, Issei Watanabe², Yoshimi Yamashita², Akira Endoh², Shinsuke Hara², Akifumi Kasamatsu² (1.Tokyo Univ. of Science, 2.NICT)

Keywords:InSb,process