The 62nd JSAP Spring Meeting, 2015

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13 Semiconductors » 13.8 Compound and power electron devices and process technology

[12a-A21-1~13] 13.8 Compound and power electron devices and process technology

Thu. Mar 12, 2015 9:00 AM - 12:30 PM A21 (6A-213)

12:15 PM - 12:30 PM

[12a-A21-13] Ohmic Contact Resistivity of δ-doped GaN Cap/AlGaN/GaN Heterostructure

〇(B)Naoki Kato1, Akihiro Ando1, Akio Wakejima1, Takashi Egawa1, Yamato Osada2, Ryuichiro Kamimura2 (1.Nagoya Inst. of Tech., 2.ULVAC)

Keywords:GaN,HEMT