The 62nd JSAP Spring Meeting, 2015

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13 Semiconductors » 13.8 Compound and power electron devices and process technology

[13p-P17-1~24] 13.8 Compound and power electron devices and process technology

Fri. Mar 13, 2015 4:30 PM - 6:30 PM P17 (Gymnasium)

4:30 PM - 6:30 PM

[13p-P17-17] MOS characteristics of SiO2 deposited by plasma CVD on n-GaN substrate

〇Katsunori Ueno1, Shinya Takashima1, Hideaki Matsuyama1, Masaharu Edo1, Kiyokazu Nakagawa2 (1.Fuji Electric, 2.Univ. Yamanashi)

Keywords:GaN,MOS,interface