The 62nd JSAP Spring Meeting, 2015

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13 Semiconductors » 13.8 Compound and power electron devices and process technology

[12p-A21-1~13] 13.8 Compound and power electron devices and process technology

Thu. Mar 12, 2015 2:00 PM - 5:30 PM A21 (6A-213)

3:15 PM - 3:30 PM

[12p-A21-6] Electrical characteristics of MIS-HEMT using HfO2 deposited by ALD on AlGaN

〇Gosuke Nishino1, Yusuke Yoshida1, Toshiharu Kubo1, Makoto Miyoshi1, Takashi Egawa1 (1.Nagoya Institute of Technology)

Keywords:Insulator