[11a-A23-1~12] 13.5 Semiconductor devices and related techologies

[11a-A23-12] Possibility of Steep Subthreshold Swing MOSFETs using Gate Insulators with Electric-Field-Dependent Permittivity and their Switching Performance Assessment

〇Hiroyuki Ota^{1, 3}, Shinji Migita^{1, 3}, Koichi Fukuda¹, Akira Toriumi^{2, 3} (1.AIST, 2.Univ. of Tokyo, 3.CREST, JST)

Keywords:ultralow voltage,steep slope,ferroelectric