[11a-B1-1~12] 15.4 III-V族窒化物結晶

▲ [11a-B1-7] High indium content (InN)m/(GaN)n SPSs on relaxed InGaN templates

〇KE WANG¹, Kazuhide Kusakabe¹, Daichi Imai¹, Akihiko Yoshikawa^{1, 2} (1.Chiba Univ., 2.Kogakuin Univ.)

キーワード：MBE, InGaN