The 62nd JSAP Spring Meeting, 2015

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15 Crystal Engineering » 15.4 III-V-group nitride crystals

[11a-B1-1~12] 15.4 III-V-group nitride crystals

Wed. Mar 11, 2015 8:30 AM - 11:45 AM B1 (6B-101)

10:45 AM - 11:00 AM

▲ [11a-B1-9] GaN growth on Hf foils using nearly lattice-matched HfN barriers by pulsed sputtering deposition

〇(D)Hyeryun Kim1, Jitsuo Ohta1, Atsushi Kobayashi1, Kohei Ueno1, Hiroshi Fujioka1, 2, 3 (1.The Univ. of Tokyo, 2.JST-CREST, 3.JST-ACCEL)

Keywords:Gallium nitride,Hafnium nitride,pulsed sputtering deposition