Oral presentation

[11a-B1-1~12] 15.4 III-V-group nitride crystals

Wed. Mar 11, 2015 8:30 AM - 11:45 AM B1 (6B-101)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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8:30 AM - 8:45 AM

[11a-B1-1] Effect of ion irradiation for MBE growth of cubic boron nitride (c-BN) thin films

〇Kazuyuki Hirama¹, Yoshitaka Taniyasu¹, Shin-ichi Karimoto¹, Hideki Yamamoto¹ (1.NTT BRL)

8:45 AM - 9:00 AM

[11a-B1-2] III/V flux ratio dependence of the ScN films prepared by molecular beam epitaxy

〇Takeshi Ohgaki¹, Isao Sakaguchi¹, Ohashi Naoki¹, Hajime Haneda¹ (1.NIMS)

9:00 AM - 9:15 AM

[11a-B1-3] Structual and optical characterization of Sm-doped GaN grown by RF-MBE

〇(M1)kentaro dehara¹, shigehiko hasegawa¹ (1.Osaka Univ,ISIR-SANKEN)

9:15 AM - 9:30 AM

[11a-B1-4] Selective Growth of GaN by RF-plasma-assisted Molecular Beam Epitaxy

〇(M1)Akihito Sonoda¹ (1.Hokkaido Univ.)

9:30 AM - 9:45 AM

[11a-B1-5] RF-MBE Growth of AlN Thin Layers on (-201) Ga₂O₃ Substrates

〇Masataka Higashiwaki¹, Yoshiaki Nakata¹, Akito Kuramata², Shigenobu Yamakoshi² (1.NICT, 2.Tamura Corp.)

Break （9:45 AM - 10:00 AM）

10:00 AM - 10:15 AM

△ [11a-B1-6] Quasi Ternary InGaN Alloys based on (InN)₁/(GaN)₄ Short-period Superlattices

〇Daichi Imai^1,^2,³, Kazuhide Kusakabe^1,², Ke Wang^1,², Akihiko Yoshikawa^1,^2,⁴ (1.C-SGIR, Chiba Univ., 2.JST-ALCA, 3.JSPS PD, 4.Kogakuin Univ.)

10:15 AM - 10:30 AM

▲ [11a-B1-7] High indium content (InN)m/(GaN)n SPSs on relaxed InGaN templates

〇KE WANG¹, Kazuhide Kusakabe¹, Daichi Imai¹, Akihiko Yoshikawa^1,² (1.Chiba Univ., 2.Kogakuin Univ.)

10:30 AM - 10:45 AM

[11a-B1-8] Characteristic of contact resistivity on p-type GaN grown by pulsed sputtering

〇Hidenari Noguchi¹, Yasuaki Arakawa¹, Kohei Ueno¹, Jitsuo Ohta¹, Hiroshi Fujioka^1,^2,³ (1.IIS, The Univ. of Tokyo, 2.JST-CREST, 3.JST-ACCEL)

10:45 AM - 11:00 AM

▲ [11a-B1-9] GaN growth on Hf foils using nearly lattice-matched HfN barriers by pulsed sputtering deposition

〇(D)Hyeryun Kim¹, Jitsuo Ohta¹, Atsushi Kobayashi¹, Kohei Ueno¹, Hiroshi Fujioka^1,^2,³ (1.The Univ. of Tokyo, 2.JST-CREST, 3.JST-ACCEL)

11:00 AM - 11:15 AM

[11a-B1-10] Fabrication and Characterization of InGaN solar cells prepared by PSD

〇Yasuaki Arakawa¹ (1.IIS, The Univ. of Tokyo)

11:15 AM - 11:30 AM

[11a-B1-11] Influence of Sputtering Power on Crystalline Quality and Surface Characteristics of AlN Films Deposited by Pulsed DC Reactive Sputtering

Hiroto Takeuchi¹, 〇Makoto Ohtsuka¹, Hiroyuki Fukuyama¹ (1.IMRAM, Tohoku Univ.)

11:30 AM - 11:45 AM

△ [11a-B1-12] Single-crystallite (1013)GaN on the nominal Si(001) substrate by the directional sputtered AlN intermediate layer

〇Tadashi Mitsunari¹, Yoshio Honda¹, Hiroshi Amano^1,² (1.Nagoya Univ., 2.Akasaki Research Center)

Oral presentation

[11p-B1-1~20] 15.4 III-V-group nitride crystals

Wed. Mar 11, 2015 1:15 PM - 6:45 PM B1 (6B-101)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:15 PM - 1:30 PM

[11p-B1-1] Growth of AlInN layer by UHV sputter epitaxy

〇(M1)Takeshi Koda¹, Akiyori Tada¹, Yuki Kobashi¹, Susumu Fukui¹, Ai Mizuno¹, Hiroyuki Shinoda¹, Nobuki Mutsukura¹ (1.Tokyo Denki Univ.)

1:30 PM - 1:45 PM

[11p-B1-2] HVPE growth of AlN on sputtering AlN template substrate

〇Daiki Yasui¹, Hideto Miyake¹, Kazumasa Hiramatsu¹, Motoaki Iwaya², Isamu Akasaki², Hiroshi Amano³ (1.Mie university, 2.Meijo university, 3.Nagoya university)

1:45 PM - 2:00 PM

[11p-B1-3] Growth of -c-plane GaN crystals by OVPE method

〇Yuuki Taniyama¹, Hiroaki Takatsu¹, Masami Juta¹, Tomoaki Sumi¹, Akira Kitamoto¹, Mamoru Imade¹, Masashi Yoshimura¹, Masashi Isemura², Yusuke Mori¹ (1.Osaka Univ., 2.Itochu Plastics Inc.)

2:00 PM - 2:15 PM

[11p-B1-4] Effects of quality of SiO₂mask on epitaxial lateral overgrowth of GaN by hydride vapor phase epitaxy

〇Shin Goubara¹, Takeshi Yamamoto¹, Takashi Inagaki¹, Narihito Okada¹, Kazuyuki Tadatomo¹, Keisuke Yamane² (1.Yamaguchi Univ., 2.Toyohashigika Univ.)

2:15 PM - 2:30 PM

[11p-B1-5] Thick GaN growth on SiNx intermediate layer using Hydride Vapor Phase Epitaxy

〇Takashi Inagaki¹, Yasumasa Okamura¹, Keisuke Yamane², Narihito Okada¹, Kazuyuki Tadatomo¹ (1.Yamaguchi Univ., 2.Toyohashi Univ.)

2:30 PM - 2:45 PM

[11p-B1-6] Reduction of bowing of GaN template using double sides growth by hydride vapor phase epitaxy

〇Takeshi Yamamoto¹, Hiroshi Ihara¹, Keisuke Yamane², Narihito Okada¹, Kazuyuki Tadatomo¹ (1.Yamaguchi Univ., 2.Toyohashi Univ.)

Break （2:45 PM - 3:00 PM）

3:00 PM - 3:15 PM

△ [11p-B1-7] Defect structures in GaN bulk crystals by Na-flux coalescence growth

〇(M2)Hirotada Asazu¹, Shotaro Takeuchi¹, Masayuki Imanishi², Yoshiaki Nakamura¹, Mamoru Imade², Yusuke Mori², Akira Sakai¹ (1.Graduate School of Engineering Science, Osaka Univ., 2.Graduate School of Engineering, Osaka Univ.)

3:15 PM - 3:30 PM

[11p-B1-8] The dependence of GaN surface molphology on carbon concentration using a high Ga composition Na flux

〇Shogo Ogawa¹, Masayuki Imanishi¹, Yuma Todoroki¹, Kosuke Murakami¹, Hiroki Imabayashi¹, Daisuke Matsuo¹, Hideo Takazawa¹, Mihoko Maruyama¹, Mamoru Imade¹, Masashi Yoshimura¹, Yusuke Mori¹ (1.Osaka Univ.)

3:30 PM - 3:45 PM

[11p-B1-9] Study of Formation and Decomposition of CN Ion in Carbon-Added Na-Ga Melt

〇Takahiro Kawamura^1,², Hiroki Imabayashi², Mihoko Maruyama², Mamoru Imade², Masashi Yoshimura², Yusuke Mori², Yoshitada Morikawa² (1.Mie Univ., 2.Osaka Univ.)

3:45 PM - 4:00 PM

[11p-B1-10] Modeling grown-in dislocation multiplication on prismatic slip planes for GaN single crystals

〇Satoshi Nakano¹, Bing Gao¹, Koichi Kakimoto¹ (1.RIAM, Kyushu Univ.)

4:00 PM - 4:15 PM

△ [11p-B1-11] Wetting angle measurement of nitrided sapphire by Ga-Al melts using sessile drop method

〇Masayoshi Adachi¹, Kosuke Yasutake², Noritaka Saito², Kunihiko Nakashima², Masashi Sugiyama³, Junji Iida³, Hiroyuki Fukuyama¹ (1.Tohoku Univ., 2.Kyushu Univ., 3.Sumitomo Metal Mining Co., Ltd)

4:15 PM - 4:30 PM

△ [11p-B1-12] Improvement of growth rate for AlN solution growth with thermodynamic calculation

〇Shota Watanabe¹, Masashi Nagaya¹, Mingyu Chen¹, Yukihisa Takeuchi¹, Kenta Aoyagi¹, Shunta Harada¹, Miho Tagawa¹, Toru Ujihara¹ (1.Nagoya Univ.)

Break （4:30 PM - 4:45 PM）

4:45 PM - 5:00 PM

[11p-B1-13] [Young Scientist Presentation Award Speech] Variation of Dominant Nonradiative Recombination Paths in AlGaN-related Structures due to Temperature

〇Shuhei Ichikawa¹, Mitsuru Funato¹, Yosuke Iwasaki², Yoichi Kawakami¹ (1.Kyoto Univ., 2.JFE Mineral Co. Ltd.)

5:00 PM - 5:15 PM

[11p-B1-14] Numerical analysis of the effect of excitation condition on energy relaxation processes of carriers and excitons in GaN

〇Bei Ma¹, Ken Morita¹, Yoshihiro Ishitani¹ (1.Chiba Univ.)

5:15 PM - 5:30 PM

[11p-B1-15] Doping dependence of intersubband absorption in non-polar m-plane AlGaN/GaN quantum wells

〇Teruhisa Kotani^1,^2,³, Munetaka Arita¹, Yasuhiko Arakawa^1,² (1.Nano Quine, 2.IIS. Univ. of Tokyo, 3.SHARP)

5:30 PM - 5:45 PM

[11p-B1-16] Well width dependence of biexciton binding energy in AlGaN-based quantum wells

Tomonori Fukuno¹, Katsuto Nakamura¹, Taira Izumi¹, Satoshi Kurai¹, Hideto Miyake², Kazumasa Hiramatsu², 〇Yoichi Yamada¹ (1.Yamaguchi Univ., 2.Mie Univ.)

5:45 PM - 6:00 PM

[11p-B1-17] Influence of Eu concentration in Eu and Mg co-doped GaN on luminescent site

〇(M1)TAKUHO KAMADA¹, HIROTO SEKIGUCHI¹, KEISUKE YAMANE¹, HIROSHI OKADA^1,², AKIHIRO WAKAHARA¹ (1.Toyohashi Univ. Tech., 2.Electronocs-Inspired Interdisciplinary Research Institute(EIIRIS))

6:00 PM - 6:15 PM

[11p-B1-18] Effect on the emission site of Al composition of Eu and Mg codoped AlGaN

〇Masayoshi Kanemoto¹, Hiroto Sekiguchi¹, Keisuke Yamane¹, Hiroshi Okada^1,², Akihiro Wakahara¹ (1.Toyohashi Univ., 2.EIIRIS)

6:15 PM - 6:30 PM

[11p-B1-19] Emission characteristics of m-plane Al_1-xIn_xN epilayers grown on a freestanding GaN substrate (III)

〇Kazunobu Kojima¹, Hirotaka Ikeda², Kenji Fujito², Shigefusa Chichibu¹ (1.IMRAM-Tohoku Univ., 2.Mitsubishi Chemical Corp.)

6:30 PM - 6:45 PM

△ [11p-B1-20] Optical characterization of m-plane Al_1-xIn_xN films using spectroscopic ellipsometry

〇(B)Daiki Kagaya¹, Yoshiki Yamazaki¹, Hirotaka Ikeda², Kenji Fujito², Kazunobu Kojima¹, Shigefusa Chichibu¹ (1.IMRAM-Tohoku Univ., 2.Mitsubishi Chemical Corporation)

Oral presentation

[12a-B1-1~12] 15.4 III-V-group nitride crystals

Thu. Mar 12, 2015 8:30 AM - 11:45 AM B1 (6B-101)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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8:30 AM - 8:45 AM

[12a-B1-1] Characterization of GaN single crystal using THz ellipsometry

〇KOHEI TACHI¹, TAKASHI FUJI^1,³, TSUTOMU ARAKI¹, YASUSHI NANISHI¹, TAKESHI NAGASHIMA², TOSHIYUKI IWAMOTO³, YUKINORI SATO³, NAOTAKE MORITA⁴, RYUICHI SUGIE⁴, SATOSHI KAMIYAMA⁵ (1.Ritsumeikan Univ., 2.Setsunan Univ., 3.PNP., 4.TRC., 5.Meijo Univ.)

8:45 AM - 9:00 AM

△ [12a-B1-2] Hall-effect measurement of homoepitaxial n-type GaN

〇Naoki Sawada¹, Tetsuo Narita², Tetsu Kachi², Tsutomu Uesugi², Jun Suda³ (1.Kyoto Univ., 2.TOYOTA Central Labs., 3.Dept. of Elec. Sci. & Eng., Kyoto Univ.)

9:00 AM - 9:15 AM

[12a-B1-3] Characterization of radiation detection for GaN diode

〇Mutsuhito Sugiura¹, Maki Kushimoto², Tadashi Mitsunari², Kohei Yamashita², Yoshio Honda², Hiroshi Amano^2,³, Hidenori Mimura⁴, Yoku Inoue¹, Toru Aoki⁴, Takayuki Nakano¹ (1.Shizuoka Univ., 2.Nagoya Univ., 3.Akasaki Research Center, 4.R.I.E. Shizuoka Univ.)

9:15 AM - 9:30 AM

[12a-B1-4] Carrier density depth profiling analysis of GaN by infrared reflection spectrum

〇Takaaki Kamijoh¹, Bei Ma¹, Ken Morita¹, Yoshihiri Ishitani¹ (1.Chiba Univ)

9:30 AM - 9:45 AM

[12a-B1-5] Analysis of exciton dynamics using emission of excited hydrogenic level of exciton in GaN

〇Kazuma Takeuchi¹, Naoyuki Oizumi¹, Bei Ma¹, Ken Morita¹, Yoshihiro Ishitani¹, Hideto Miyake², Kazumasa Hiramatsu² (1.Chiba Univ., 2.Mie Univ.)

9:45 AM - 10:00 AM

[12a-B1-6] Effect of threading dislocation on optical property of Eu-doped GaN

〇Hiroyuki Tahara¹, Hiroto Sekiguchi¹, Keisuke Yamane¹, Hiroshi Okada^1,², Akihiro Wakahara¹ (1.Toyohashi Univ. Tech., 2.EIIRIS)

Break （10:00 AM - 10:15 AM）

10:15 AM - 10:30 AM

[12a-B1-7] Fabrication of In_xGa_1-xN (~0.3) photovoltaic cells with n⁺-p structure by MOVPE

〇(PC)Kazuki Kodama¹, Hiroyuki Nomura^1,², Naoki Shigekawa³, Akio Yamamoto^1,², Masaaki Kuzuhara¹ (1.univ. of Fukui, 2.JST-CREST, 3.Osaka City Univ.)

10:30 AM - 10:45 AM

△ [12a-B1-8] Emission mechanism in InGaN single quantum wells on regularly-arrayed GaN nanocolumns

〇(B)Rin Miyagawa¹, Takao Oto¹, Yutaro Mizuno¹, Tatsuya Kano¹, Jun Yoshida¹, Katsumi Kishino^1,² (1.Sophia Univ., 2.Sophia Nanotech. Res. Center)

10:45 AM - 11:00 AM

△ [12a-B1-9] Emission Properties in Regularly Arranged Thin (Diameter: 35 nm) InGaN/GaN Nanocolumns.

〇(B)Jun Yoshida¹, Tatsuya Kano¹, Takao Oto¹, Yutaro Mizuno¹, Rin Miyagawa¹, Katsumi Kishino^1,² (1.Sophia Univ., 2.Sophia Nanotech.)

11:00 AM - 11:15 AM

[12a-B1-10] Temperature dependent double peak emissions in regularly-arrayed InGaN-based nanocolumns

〇(PC)Takao Oto¹, Yutaro Mizuno¹, Rin Miyagawa¹, Tatsuya Kano¹, Jun Yoshida¹, Katsumi Kishino^1,² (1.Sophia Univ., 2.Sophia Nanotech. Res. Center)

11:15 AM - 11:30 AM

[12a-B1-11] Optical properties of InGaN-based light-emitting diodes with potential barrier formed on V-pit

〇Kohei Sugimoto¹, Narihito Okada¹, Yoichi Yamada¹, Kazuyuki Tadatomo¹ (1.Yamaguchi.Univ.)

11:30 AM - 11:45 AM

[12a-B1-12] Electrical properties of InGaN-based light-emitting diodes with potential barrier formed on V-pit

〇Kohei Sugimoto¹, Narihito Okada¹, Yoichi Yamada¹, Kazuyuki Tadatomo¹ (1.Yamaguchi Univ.)

Oral presentation

[12p-B1-1~23] 15.4 III-V-group nitride crystals

Thu. Mar 12, 2015 1:15 PM - 7:45 PM B1 (6B-101)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

+Add all to schedule

1:15 PM - 1:45 PM

[12p-B1-1] [Kashiko Kodate Award Speech] Crystal growth of thin film hetero-structures for compound semiconductor-based alloys

〇Momoko Deura¹ (1.Tohoku Univ.)

1:45 PM - 2:00 PM

[12p-B1-2] Effects of c-plane-sapphire off angle on MOVPE grown AlN

〇Shuhei Suzuki¹, Chiahung Lin¹, Hideto Miyake¹, Kazumasa Hiramatsu¹, Hiroyuki Fukuyama² (1.Mie Univ., 2.IMR,Tohoku Univ.)

2:00 PM - 2:15 PM

[12p-B1-3] Influences of c-plane sapphire surface on AlN growth by MOVPE

〇Chiahung Lin¹, Shuhei Suzuki¹, Shunsuke Okada¹, Hideto Miyake¹, Kazumasa Hiramatsu¹ (1.Mie Univ.)

2:15 PM - 2:30 PM

△ [12p-B1-4] MOVPE of (0001)AlN on NH₃ annealed (11-20) sapphire substrates

〇Mami Shibaoka¹, Mitsuru Funato¹, Yoichi Kawakami¹ (1.Kyoto Univ.)

2:30 PM - 2:45 PM

[12p-B1-5] Fabrication of high-quality AlN buffer layer for deep-UV LEDs grown on wet chemical etched patterned sapphire substrate

〇Yuuya Kanazawa^1,², Shiro Toyoda^1,², Issei Ohsima^1,², Norihiko Kamata², Yukio Kashima³, Eriko Matsuura³, Satoshi Shimatani⁴, Mitsunori Kokubo⁵, Takaharu Tashiro⁵, Takafumi Ohkawa⁵, Ryuichiro Kaminura⁶, Yamato Osada⁶, Hideki Hirayama¹ (1.RIKEN, 2.Saimata Univ., 3.MARUBUN, 4.TOKYO OHKA KOGYO, 5.TOSHIBA MACHINE, 6.ULVAC)

2:45 PM - 3:00 PM

▲ [12p-B1-6] Elimination of small-angle grain boundary in AlN grown on sapphire substrate

〇(P)RYAN BANAL¹, MASATAKA IMURA¹, YASUO KOIDE¹ (1.NIMS)

3:00 PM - 3:15 PM

[12p-B1-7] Vapor phase epitaxy of AlN thick films from environmentally-friendly sources of Al powders and nitrogen gas

〇PeiTsen Wu¹, MItsuru Funato¹, Yoichi Kawakami¹ (1.Kyoto Univ.)

Break （3:15 PM - 3:30 PM）

3:30 PM - 3:45 PM

[12p-B1-8] Ab initio-based approach for surface structure and initial growth process on AlN(1122) surface

〇Yoshitaka Takemoto¹, Toru Akiyama¹, Kohji Nakamura¹, Tomonori Ito¹ (1.Mie Univ.)

3:45 PM - 4:00 PM

[12p-B1-9] Improvement of deep ultraviolet emission intensity by the well layer's compositional modulation.

〇Takahiro Oohashi¹, Ryuichi Toba¹ (1.Tohoku Univ.)

4:00 PM - 4:15 PM

△ [12p-B1-10] Nonpolar High-Al-composition AlGaN Growth on SiC by MOVPE

〇hironori okumura¹, Yoshitaka Taniyasu¹, Hideki Yamamoto¹ (1.NTT BRL)

4:15 PM - 4:30 PM

△ [12p-B1-11] Electrical properties of high carrier concentration n-type AlGaN

〇Kunihiro Takeda¹, Kazuki Mori¹, Tomoaki Yamada¹, Motoaki Iwaya¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Isamu Akasaki^1,² (1.Meijo Univ., 2.Akasaki Research Center, Nagoya Univ.)

4:30 PM - 4:45 PM

[12p-B1-12] Growth of AlGaN (0001) epitaxial layer on Ga₂O₃ (-201) substrate

〇YOSHIKATSU MORISHIMA¹, HIRAYAMA HIDEKI², YAMASHITA YOSHIHIRO¹, IIZUKA KAZUYUKI¹, KURAMATA AKITO¹, YAMAKOSHI SHIGENOBU¹ (1.Tamura Corporation, 2.RIKEN)

4:45 PM - 5:00 PM

[12p-B1-13] Nitride-based Tunnel Junctions for deep UV-LEDs

〇Daiki Takasuka¹, Daichi Minamikawa¹, Masataka Ino¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹, Satoshi Kamiyama¹, Hiroshi Amano², Isamu Akasaki^1,³ (1.Meijo Univ., 2.Nagoya Univ., 3.ARC. Inst)

5:00 PM - 5:15 PM

△ [12p-B1-14] Investigation of monolithic white light-emitting diode with tunnel junction

〇Takahisa Kato¹, Daisuke Iida², Shunsuke Kawai¹, Satoshi Kamiyama¹, Tetuya Takeuchi¹, Motoaki Iwaya¹, Isamu Akasaki^1,³ (1.Meijo Univ, 2.Tokyo Univ. of Science, 3.ARC.Inst)

Break （5:15 PM - 5:30 PM）

5:30 PM - 5:45 PM

[12p-B1-15] [Young Scientist Presentation Award Speech] Structural and optical properties of MOVPE-grown N-polar (0001) InGaN multiple quantum wells and light-emitting diodes

〇Kanako Shojiki¹, Jung-Hun Choi¹, Tomoyuki Tanikawa^1,², Takeshi Kimura^1,², Shigeyuki Kuboya¹, Takashi Hanada^1,², Ryuji Katayama^1,², Takashi Matsuoka^1,² (1.IMR, Tohoku Univ., 2.JST, CREST)

5:45 PM - 6:00 PM

△ [12p-B1-16] InGaN/GaN multiple quantum well growth on (0001) GaN by raised pressure MOVPE

〇Akira Tamura¹, Tetsuya Yamamoto¹, Yoshio Honda¹, Hiroshi Amano^1,² (1.Nagoya Univ., 2.Akasaki Research Center)

6:00 PM - 6:15 PM

[12p-B1-17] Correlation between CL and impurities on pits formed on surface of InGaN films

〇Masatomo Sumiya^1,⁴, Naoki Toyomitsu^1,², Jianyu Wang¹, Yoshitomo Harada³, Liwen Sang¹, Takashi Skiguchi¹, Tomohiro Yamaguchi², Toru Honda² (1.NIMS, 2.Kougakuin Univ., 3.Hosei Univ., 4.JST-ALCA)

6:15 PM - 6:30 PM

[12p-B1-18] In situ X-ray diffraction measurement of GaInN single layer and GaInN/GaN superlattices on GaN

〇(B)junya ohsumi¹, koji ishihara¹, taiji yamamoto¹, motoaki iwaya¹, tetsuya takeuchi¹, satoshi kamiyama¹, isamu akasaki^1,² (1.Meijo Univ., 2.ARC,Nagoya Univ.)

6:30 PM - 6:45 PM

[12p-B1-19] Digital Alloy SMART (InN)₁/(GaN)₄ Grown by Low NH₃ Partial Pressure MOVPE

〇Kazuhide Kusakabe¹, Akihiko Yoshikawa^1,² (1.C-SGIR, Chiba Univ., 2.Kogakuin Univ)

6:45 PM - 7:00 PM

△ [12p-B1-20] Reduction of the threading dislocation density in N-polar (0001) GaN grown by selective-area MOVPE

〇Takashi Aisaka¹, Tomoyuki Tanikawa^1,², Takeshi Kimura^1,², Kanako Shojiki¹, Shigeyuki Kuboya^1,², Ryuji Katayama^1,², Takashi Matsuoka^1,², Hideto Miyake³ (1.IMR, Tohoku Univ., 2.JST-CREST, 3.Mie Univ.)

7:00 PM - 7:15 PM

[12p-B1-21] Study on thermal stability of GaN surface

〇Shunsuke Okada¹, Hideto Miyake¹, Kazumasa Hiramatsu¹, Takashi Aisaka², Tomoyuki Tanikawa², Takashi Matsuoka² (1.Mie Univ., 2.IMR, Tohoku Univ.)

7:15 PM - 7:30 PM

[12p-B1-22] TEM evaluation of low-temperature GaN buffer layer grown on sapphire substrate

〇Tohoru Matsubara^1,², Kouhei Sugimoto¹, Narihito Okada¹, Kazuyuki Tadatomo¹ (1.Yamaguchi Univ., 2.UBE Sci. Analysis Lab.)

7:30 PM - 7:45 PM

[12p-B1-23] Improvement in the DUV luminescence of hexagonal boron nitride films grown by low-pressure CVD

〇Naoki Umehara¹, Atsushi Masuda¹, Takaki Shimizu², Tetsuya Kouno¹, Hiroko Kominami¹, Kazuhiko Hara^3,⁴ (1.Graduate school of Eng., Shizuoka Univ., 2.Faculty of Eng., Shizuoka Univ., 3.Graduate school of Sci. and Tech., Shizuoka Univ., 4.Res. Inst. of Electronics, Shizuoka Univ.)

Poster presentation

[12p-P16-1~19] 15.4 III-V-group nitride crystals

Thu. Mar 12, 2015 4:00 PM - 6:00 PM P16 (Gymnasium)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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4:00 PM - 6:00 PM

[12p-P16-1] Radiation patterns of lasing light in thin hexagonal GaN microdisk

〇Tetsuya Kouno¹, Sho Suzuki¹, Masaru Sakai², Katsumi Kishino³, Kazuhiko Hara¹ (1.Shizuoka UNiv., 2.Univ. of Yamanashi, 3.Sophia Univ.)

4:00 PM - 6:00 PM

[12p-P16-2] Electronic structure calculation of the metastable phase of wurtzite boron nitride

〇Yuichi Ota¹, Kouichi Tokita¹, Hiroto Watanabe¹ (1.TIRI)

4:00 PM - 6:00 PM

[12p-P16-3] The examination of dependence on V/III ratio in GaN double polarity selective area growth

〇Kenta Kuze¹, Yoku Inoue¹, Takayuki Nakano¹ (1.Shizuoka Univ.)

4:00 PM - 6:00 PM

[12p-P16-4] GaN Single Layer Growth on GaN Substrate with Low C Impurity Density by MOCVD

〇Guanxi Piao^1,², Kazutada Ikenaga¹, Yoshiki Yano¹, Hiroki Tokunaga¹, Akira Mishima², Yuzabubro Ban², Toshiya Tabuchi¹, Kou Matsumoto¹ (1.TNSC, 2.TN CSE LTD.)

4:00 PM - 6:00 PM

▼ [12p-P16-5] Low-Temperature Growth of InN Films on Si(111) Substrates by Radical-Enhanced Metal-Organic Chemical Vapor Deposition

〇(PC)Yi Lu¹, Osamu Oda¹, Kazuki Iwamoto¹, Hiroki Kondo¹, Kenji Ishikawa¹, Makoto Sekine¹, Masaru Hori¹ (1.Nagoya University)

4:00 PM - 6:00 PM

[12p-P16-6] Laser-based in situ monitoring of high In-content InGaN growth on GaN(0001)

〇(B)Tetsuya Yamamoto^1,², Akira Tamura^1,², Yoshio Honda^1,², Hiroshi Amano^1,² (1.Nagoya Univ., 2.ARC)

4:00 PM - 6:00 PM

[12p-P16-7] Dislocation densities of AlN layers grown by RF-MBE using an AlON buffer layer

〇Taiki Hata¹, Takahiro Yamazaki¹, Yusuke Yamane¹, Michiya Maeda¹, Kazuhide Kumakura², Hideki Yamamoto², Toshiki Makimoto¹ (1.Waseda Univ., 2.NTT BRL.)

4:00 PM - 6:00 PM

[12p-P16-8] Aluminum growth on sapphire substrate with surface nitridation by RF-MBE

〇(B)Yuya Hoshikawa¹, Shinya Osawa¹, Yudai Matsumoto¹, Tomohiro Yamaguchi¹, Takeyoshi Onuma^1,², Tohru Honda¹ (1.Kogakuin Univ., 2.Tokyo National College of Technology)

4:00 PM - 6:00 PM

[12p-P16-9] Self-organized growth of InN dot arrays using 4H-SiC (0001) vicinal substrates

〇Seiya Mori¹, Kengo Takamiya¹, Misao Orihara¹, Shuhei Yagi¹, Yasuto Hijikata¹, Hiroyuki Yaguchi¹ (1.Saitama Univ.)

4:00 PM - 6:00 PM

[12p-P16-10] GaN lateral growth by liquid phase electroepitaxy using thickness-controlled mesa-shaped template substrate

〇Muneki Iwakawa¹, Hiroyuki Takakura¹, Masahumi Tomita¹, Daisuke Kambayashi¹, Ryota Yasui¹, Yosuke Mizuno¹, Takahiro Maruyama¹, Shigeya Naritsuka¹ (1.Meijo Univ.)

4:00 PM - 6:00 PM

[12p-P16-11] Optical micro-resonators of AlGaN-based microdisk fabricated via hydrogen environment thermal etching technique of GaN

〇Sho Suzuki¹, Tetsuya Kouno¹, Akihiko Kikuchi², Masaru Sakai³, Katsumi Kishino², kazuhiko Hara¹ (1.Shizuoka Univ., 2.Sophia Univ., 3.Univ. of Yamanashi)

4:00 PM - 6:00 PM

[12p-P16-12] High Resolution Steady State Photo Capacitance Measurement in GaN-SBDs

〇Manato Deki¹, Tomoya Ohuchi¹, Yoshio Honda¹, Hiroshi Amano¹ (1.Nagoya Univ.)

4:00 PM - 6:00 PM

[12p-P16-13] Temperature Dependence of Monochromatic CL Images of InGaN Epitaxial Layer

〇Satoshi Kurai¹, Ayumu Wakamatsu¹, Yoichi Yamada¹ (1.Yamaguchi Univ.)

4:00 PM - 6:00 PM

[12p-P16-14] Characterization of LED efficiency by the biased photocurrent and PL measurement

〇(M1)Shigeyoshi Usami^1,², Hiroshi Amano^1,², Yoshio Honda^1,² (1.Nagoya Univ., 2.ARC)

4:00 PM - 6:00 PM

[12p-P16-15] Sintered Tantalum Carbide Coatings on Graphite Substrates: Highly-Reliable Protective Coatings for Bulk and Epitaxial Film Growth

〇Daisuke Nakamura¹, Akitoshi Suzumura¹, Keisuke Shigetoh¹ (1.Toyota Central R&D Labs., Inc.)

4:00 PM - 6:00 PM

[12p-P16-16] Hole Spreading Effects by SL-p-AlGaN Transparent Contact Layer in Deep UV LED

〇Noritoshi Maeda¹, Masafumi Jo¹, Hideki Hirayama¹ (1.RIKEN)

4:00 PM - 6:00 PM

[12p-P16-17] Growth of InN layer on ZnO/Al₂O₃ template by UHV sputter epitaxy

〇(M2)Akiyori Tada¹, Yuki Kobashi¹, Susumu Fukui¹, Takeshi Koda¹, Ai Mizuno¹, Hiroyuki Shinoda¹, Nobuki Mutsukura¹ (1.Tokyo Denki Univ.)

4:00 PM - 6:00 PM

[12p-P16-18] Growth of InN layer on GaN/Al₂O₃template by UHV sputter epitaxy

〇(M2)Susumu Fukui¹, Yuki Kobashi¹, Akiyori Tada¹, Takeshi Koda¹, Ai Mizuno¹, Hiroyuki Shinoda¹, Nobuki Mutsukura¹ (1.Tokyo Denki Univ.)

4:00 PM - 6:00 PM

[12p-P16-19] Viscoelasticity and adhesion property of BN films prepared by Reactive Plasma-Assisted Coating (RePAC)

〇Masao Noma¹, Michiru Yamashita², Koji Eriguchi³, Shigehiko Hasegawa⁴ (1.SHINKO SEIKI. Co., LTD., 2.Hyogo Prefectural Institute of Technology, 3.Kyoto Univ., 4.Osaka Univ.)

Oral presentation

[13a-B1-1~17] 15.4 III-V-group nitride crystals

Fri. Mar 13, 2015 8:30 AM - 1:00 PM B1 (6B-101)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

+Add all to schedule

8:30 AM - 8:45 AM

△ [13a-B1-1] Enhancement of amplitude of laser-induced THz emission by defects in GaN

〇Yuji Sakai¹, Iwao Kawayama¹, Hidetoshi Nakanishi², Masayoshi Tonouchi¹ (1.ILE, Osaka Univ., 2.SCREEN Holdings Co., Ltd.)

8:45 AM - 9:00 AM

[13a-B1-2] Study of dependence on nanostructure and the refractive index of the surface plasmon resonance

〇Kazumasa Niwa¹, Takahisa Kato¹, Shunsuke Kawai¹, Daisuke Iida², Satoshi Kamiyama¹, Tetuya Takeuchi¹, Motoaki Iwaya¹, Isamu Akasaki^1,³ (1.Meijo Univ., 2.Tokyo Univ. of Science, 3.ARC Inst.)

9:00 AM - 9:15 AM

△ [13a-B1-3] Low-thermal-resistance well-ordered nanocolumns LED employing a flip-chip process

〇Hiroaki Hayashi¹, Daishi Fukushima¹, Tomohiro Noma¹, Makoto Mizuno¹, Yuta Konno¹, Katsumi Kishino¹ (1.Sophia univ.)

9:15 AM - 9:30 AM

[13a-B1-4] Flip-chip process of well-ordered nanocolumns LED on a sputter-deposited AlN film

〇tomohiro noma¹, hiroaki hayashi¹, daishi fukushima¹, itirou nomura¹, katsumi kishino¹ (1.Sophia Univ.)

9:30 AM - 9:45 AM

▲ [13a-B1-5] Nitrogen Excess Pressure Annealing of Gallium Nitride using a Novel Heat-Beam Method

〇(M1)NADIA NURSYAFIQAH¹, YUJI AWANO¹ (1.KEIO UNIV.)

9:45 AM - 10:00 AM

△ [13a-B1-6] Contact characteristics of V-based electrode for high AlN molar fraction n-AlGaN

〇kazuki mori¹, takeda kunihiro¹, kusafuka toshiki¹, iwaya motoaki¹, kamiyama satoshi¹, takeuchi tetsuya¹, akasaki isamu^1,², amano hiroshi³ (1.Meijo Univ, 2.Akasaki Res. Cen, 3.Nagoya Univ)

10:00 AM - 10:15 AM

[13a-B1-7] Study on the manufacture of high-performance near-ultra-violet LED

〇Ayaka Gemma¹, Shunsuke Kawai¹, Motoaki Iwaya¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Isamu Akasaki^1,² (1.Meijo Univ., 2.ARC.Inst.)

10:15 AM - 10:30 AM

△ [13a-B1-8] Performance of nitride-based blue LEDs fabricated on substrate with nanostructured SiO₂

〇Shun Hanai¹, Tsukasa Kitano¹, Motoaki Iwaya¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Isamu Akasaki^1,² (1.Meijo Univ., 2.Akasaki Research Center, Nagoya Univ.)

Break （10:30 AM - 10:45 AM）

10:45 AM - 11:00 AM

[13a-B1-9] [Young Scientist Presentation Award Speech] Stimulated emission characteristics of the (1–101) InGaN optical stripe cavity on (001) Si substrate Stimu

〇Maki Kushimoto¹, Yoshio Honda¹, Hiroshi Amano^1,² (1.Nagoya Univ., 2.Akasaki Research Center)

11:00 AM - 11:15 AM

[13a-B1-10] Fabrication of micro-light emitting diodes on Si / SiO₂/ GaN based LED wafer

〇Kazuaki Tsuchiyama¹, Shu Utsunomiya¹, Keisuke Yamane¹, Hiroto Sekiguchi¹, Hiroshi Okada^1,², Akihiro Wakahara¹ (1.Toyohashi Univ. Tech., 2.EIIRIS)

11:15 AM - 11:30 AM

[13a-B1-11] Hydrogen evolution from water using InGaN photoelectrode

〇Yusuke Uetake¹, Taro Ogita¹, Daisuke Iida¹, Patrick Ginet², Kazuhiro Ohkawa¹ (1.Tokyo Univ. of Science, 2.Air Liquide Laboratories)

11:30 AM - 11:45 AM

[13a-B1-12] Electrical and Optical Characteristics of Blue Light Emitting Transistors with an InGaN Single Quantum Well

〇Junichi Nishinaka¹, Kazuhide Kumakura¹, Hideki Yamamoto¹ (1.NTT BRL)

11:45 AM - 12:00 PM

[13a-B1-13] Optical Response of Nitride-based Light-Emitting Transistors

〇Kazuhide Kumakura¹, Junichi Nishinaka¹, Hideki Yamamoto¹ (1.NTT BRL)

12:00 PM - 12:15 PM

△ [13a-B1-14] Investigation of spectral diffusion in site-controlled GaN nanowire quantum dots by Fourier spectroscopy

〇Mark Holmes¹, Satoshi Kako², Kihyun Choi¹, Munetaka Arita¹, Yasuhiko Arakawa^1,² (1.Tokyo Univ.NanoQuine, 2.Tokyo Univ. IIS)

12:15 PM - 12:30 PM

[13a-B1-15] Structural characterization of GaN/AlGaN interface-fluctuation quantum dots

〇Munetaka Arita¹, Taichi Iki², Yasuhiko Arakawa^1,² (1.NanoQuine, Univ. of Tokyo, 2.IIS, Univ. of Tokyo)

12:30 PM - 12:45 PM

▲ [13a-B1-16] High-Q AlGaN photonic crystal nanocavities for coupling with fluctuation GaN QDs

〇Sylvain Sergent¹, Munetaka Arita¹, Satoshi Kako², Taichi Iki¹, Satoshi Iwamoto^1,², Yasuhiko Arakawa^1,² (1.Nanoquine, Univ. of Tokyo, 2.IIS, Univ. of Tokyo)

12:45 PM - 1:00 PM

[13a-B1-17] Observation of biexciton emission from localization centers in AlGaN thin films

〇Taichi IKI¹, Munetaka Arita², Satoshi Kako^1,², Yasuhiko Arakawa^1,² (1.IIS, 2.NanoQuine)

Oral presentation

[13p-B1-1~7] 15.4 III-V-group nitride crystals

Fri. Mar 13, 2015 4:15 PM - 6:00 PM B1 (6B-101)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

+Add all to schedule

4:15 PM - 4:30 PM

[13p-B1-1] [Young Scientist Presentation Award Speech] Large biexciton binding energy of site-controlled GaN nanowire quantum dots

〇Kihyun Choi¹, Mark Holmes¹, Satoshi Kako², Munetaka Arita¹, Yasuhiko Arakawa^1,² (1.NanoQuine, 2.IIS, Univ. of Tokyo)

4:30 PM - 4:45 PM

▲ [13p-B1-2] Momentum Space Spectroscopy of AlGaN/Air DBR Microcavities

〇Renchun Tao¹, Munetaka Arita², Satoshi Kako¹, Kenji Kamide², Yasuhiko Arakawa^1,² (1.IIS., Univ. of Tokyo, 2.NanoQuine., Univ. of Tokyo)

4:45 PM - 5:00 PM

[13p-B1-3] Crystal growth of nitride nanocolumns on graphene nucleation layer

〇yuta konno¹, hiroaki hiroaki¹, katumi kishino¹ (1.Sophia Univ.)

5:00 PM - 5:15 PM

△ [13p-B1-4] Fabrication of nano-stuructured InGaN/GaN multi quantum well using hydrogen environment anisotropic thermal etching

〇Tomoya Mizutani¹, Ryo Hachiya¹, Hiroki Furuhashi¹, Ryo Kita¹, Akihiko Kikuchi^1,² (1.Sophia Univ., 2.Sophia Nanotech ctr.)

5:15 PM - 5:30 PM

[13p-B1-5] Theoretical investigations for atom segregation around threading dislocations in nitride semiconductors

〇Ryohei Sakaguchi¹, Toru Akiyama¹, Kohji Nakamura¹, Tomonori Ito¹ (1.Mie Univ.)

5:30 PM - 5:45 PM

[13p-B1-6] Characterization of InGaN based Devices on GaN Substrates by X-Ray Microbeam

〇Toshiya Yokogawa¹, Takuya Kakoi¹, Yasuhiko Imai², Shigeru Kimura² (1.Yamaguchi Univ., 2.JASRI)

5:45 PM - 6:00 PM

△ [13p-B1-7] Polarized nitride based LED with Si subwavelength grating/SiO₂ interlayer on LED structure

〇Yuusuke Takashima¹, Masato Tanabe¹, Ryo Shimizu¹, Masanobu Haraguchi^1,², Yoshiki Naoi^1,² (1.ATS,Tokushima Univ., 2.STS,Tokushima Univ.)

Sessions

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[11a-B1-1~12] 15.4 III-V-group nitride crystals

△ [11a-B1-6] Quasi Ternary InGaN Alloys based on (InN)1/(GaN)4 Short-period Superlattices

▲ [11a-B1-7] High indium content (InN)m/(GaN)n SPSs on relaxed InGaN templates

▲ [11a-B1-9] GaN growth on Hf foils using nearly lattice-matched HfN barriers by pulsed sputtering deposition

△ [11a-B1-12] Single-crystallite (1013)GaN on the nominal Si(001) substrate by the directional sputtered AlN intermediate layer

[11p-B1-1~20] 15.4 III-V-group nitride crystals

△ [11p-B1-7] Defect structures in GaN bulk crystals by Na-flux coalescence growth

△ [11p-B1-11] Wetting angle measurement of nitrided sapphire by Ga-Al melts using sessile drop method

△ [11p-B1-12] Improvement of growth rate for AlN solution growth with thermodynamic calculation

△ [11p-B1-20] Optical characterization of m-plane Al1-xInxN films using spectroscopic ellipsometry

[12a-B1-1~12] 15.4 III-V-group nitride crystals

△ [12a-B1-2] Hall-effect measurement of homoepitaxial n-type GaN

△ [12a-B1-8] Emission mechanism in InGaN single quantum wells on regularly-arrayed GaN nanocolumns

△ [12a-B1-9] Emission Properties in Regularly Arranged Thin (Diameter: 35 nm) InGaN/GaN Nanocolumns.

[12p-B1-1~23] 15.4 III-V-group nitride crystals

△ [12p-B1-4] MOVPE of (0001)AlN on NH3 annealed (11-20) sapphire substrates

▲ [12p-B1-6] Elimination of small-angle grain boundary in AlN grown on sapphire substrate

△ [12p-B1-10] Nonpolar High-Al-composition AlGaN Growth on SiC by MOVPE

△ [12p-B1-11] Electrical properties of high carrier concentration n-type AlGaN

△ [12p-B1-14] Investigation of monolithic white light-emitting diode with tunnel junction

△ [12p-B1-16] InGaN/GaN multiple quantum well growth on (0001) GaN by raised pressure MOVPE

△ [12p-B1-20] Reduction of the threading dislocation density in N-polar (0001) GaN grown by selective-area MOVPE

[12p-P16-1~19] 15.4 III-V-group nitride crystals

▼ [12p-P16-5] Low-Temperature Growth of InN Films on Si(111) Substrates by Radical-Enhanced Metal-Organic Chemical Vapor Deposition

[13a-B1-1~17] 15.4 III-V-group nitride crystals

△ [13a-B1-1] Enhancement of amplitude of laser-induced THz emission by defects in GaN

△ [13a-B1-3] Low-thermal-resistance well-ordered nanocolumns LED employing a flip-chip process

▲ [13a-B1-5] Nitrogen Excess Pressure Annealing of Gallium Nitride using a Novel Heat-Beam Method

△ [13a-B1-6] Contact characteristics of V-based electrode for high AlN molar fraction n-AlGaN

△ [13a-B1-8] Performance of nitride-based blue LEDs fabricated on substrate with nanostructured SiO2

△ [13a-B1-14] Investigation of spectral diffusion in site-controlled GaN nanowire quantum dots by Fourier spectroscopy

▲ [13a-B1-16] High-Q AlGaN photonic crystal nanocavities for coupling with fluctuation GaN QDs

[13p-B1-1~7] 15.4 III-V-group nitride crystals

▲ [13p-B1-2] Momentum Space Spectroscopy of AlGaN/Air DBR Microcavities

△ [13p-B1-4] Fabrication of nano-stuructured InGaN/GaN multi quantum well using hydrogen environment anisotropic thermal etching

△ [13p-B1-7] Polarized nitride based LED with Si subwavelength grating/SiO2 interlayer on LED structure

Authentication

△ [11a-B1-6] Quasi Ternary InGaN Alloys based on (InN)₁/(GaN)₄ Short-period Superlattices

△ [11p-B1-20] Optical characterization of m-plane Al_1-xIn_xN films using spectroscopic ellipsometry

△ [12p-B1-4] MOVPE of (0001)AlN on NH₃ annealed (11-20) sapphire substrates

△ [13a-B1-8] Performance of nitride-based blue LEDs fabricated on substrate with nanostructured SiO₂

△ [13p-B1-7] Polarized nitride based LED with Si subwavelength grating/SiO₂ interlayer on LED structure