[12p-P16-1~19] 15.4 III-V-group nitride crystals

[12p-P16-10] GaN lateral growth by liquid phase electroepitaxy using thickness-controlled mesa-shaped template substrate

〇Muneki Iwakawa¹, Hiroyuki Takakura¹, Masahumi Tomita¹, Daisuke Kambayashi¹, Ryota Yasui¹, Yosuke Mizuno¹, Takahiro Maruyama¹, Shigeya Naritsuka¹ (1.Meijo Univ.)

Keywords:GaN,LPE