TEM evaluation of low-temperature GaN buffer layer grown on sapphire substrate

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

Thu. Mar 12, 2015 1:15 PM - 7:45 PM B1 (6B-101)

7:15 PM - 7:30 PM

〇Tohoru Matsubara^1,², Kouhei Sugimoto¹, Narihito Okada¹, Kazuyuki Tadatomo¹ (1.Yamaguchi Univ., 2.UBE Sci. Analysis Lab.)

Keywords:gallium nitride,threading dislocation,stacking fault