The 62nd JSAP Spring Meeting, 2015

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15 Crystal Engineering » 15.4 III-V-group nitride crystals

[12p-B1-1~23] 15.4 III-V-group nitride crystals

Thu. Mar 12, 2015 1:15 PM - 7:45 PM B1 (6B-101)

3:45 PM - 4:00 PM

[12p-B1-9] Improvement of deep ultraviolet emission intensity by the well layer's compositional modulation.

〇Takahiro Oohashi1, Ryuichi Toba1 (1.Tohoku Univ.)

Keywords:AlGaN,Cathode luminescence