[12p-B1-1~23] 15.4 III-V-group nitride crystals

△ [12p-B1-20] Reduction of the threading dislocation density in N-polar (0001) GaN grown by selective-area MOVPE

〇Takashi Aisaka¹, Tomoyuki Tanikawa^{1, 2}, Takeshi Kimura^{1, 2}, Kanako Shojiki¹, Shigeyuki Kuboya^{1, 2}, Ryuji Katayama^{1, 2}, Takashi Matsuoka^{1, 2}, Hideto Miyake³ (1.IMR, Tohoku Univ., 2.JST-CREST, 3.Mie Univ.)

Keywords:selective area growth,MOVPE,nitride semiconductor