Enhancement of amplitude of laser-induced THz emission by defects in GaN

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

Fri. Mar 13, 2015 8:30 AM - 1:00 PM B1 (6B-101)

8:30 AM - 8:45 AM

〇Yuji Sakai¹, Iwao Kawayama¹, Hidetoshi Nakanishi², Masayoshi Tonouchi¹ (1.ILE, Osaka Univ., 2.SCREEN Holdings Co., Ltd.)

Keywords:THz,Nitride semiconductor