InGaN/GaN multiple quantum well growth on (0001) GaN by raised pressure MOVPE

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

Thu. Mar 12, 2015 1:15 PM - 7:45 PM B1 (6B-101)

5:45 PM - 6:00 PM

〇Akira Tamura¹, Tetsuya Yamamoto¹, Yoshio Honda¹, Hiroshi Amano^1,² (1.Nagoya Univ., 2.Akasaki Research Center)

Keywords:raised pressure MOVPE,InGaN,multiple quantum well