The 62nd JSAP Spring Meeting, 2015

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15 Crystal Engineering » 15.4 III-V-group nitride crystals

[12a-B1-1~12] 15.4 III-V-group nitride crystals

Thu. Mar 12, 2015 8:30 AM - 11:45 AM B1 (6B-101)

8:30 AM - 8:45 AM

[12a-B1-1] Characterization of GaN single crystal using THz ellipsometry

〇KOHEI TACHI1, TAKASHI FUJI1, 3, TSUTOMU ARAKI1, YASUSHI NANISHI1, TAKESHI NAGASHIMA2, TOSHIYUKI IWAMOTO3, YUKINORI SATO3, NAOTAKE MORITA4, RYUICHI SUGIE4, SATOSHI KAMIYAMA5 (1.Ritsumeikan Univ., 2.Setsunan Univ., 3.PNP., 4.TRC., 5.Meijo Univ.)

Keywords:terahertz,ellipsometry,GaN