The 62nd JSAP Spring Meeting, 2015

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15 Crystal Engineering » 15.4 III-V-group nitride crystals

[12a-B1-1~12] 15.4 III-V-group nitride crystals

Thu. Mar 12, 2015 8:30 AM - 11:45 AM B1 (6B-101)

8:45 AM - 9:00 AM

△ [12a-B1-2] Hall-effect measurement of homoepitaxial n-type GaN

〇Naoki Sawada1, Tetsuo Narita2, Tetsu Kachi2, Tsutomu Uesugi2, Jun Suda3 (1.Kyoto Univ., 2.TOYOTA Central Labs., 3.Dept. of Elec. Sci. & Eng., Kyoto Univ.)

Keywords:Gallium Nitride,Hall-effect