The 62nd JSAP Spring Meeting, 2015

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15 Crystal Engineering » 15.4 III-V-group nitride crystals

[11p-B1-1~20] 15.4 III-V-group nitride crystals

Wed. Mar 11, 2015 1:15 PM - 6:45 PM B1 (6B-101)

2:00 PM - 2:15 PM

[11p-B1-4] Effects of quality of SiO2 mask on epitaxial lateral overgrowth of GaN by hydride vapor phase epitaxy

〇Shin Goubara1, Takeshi Yamamoto1, Takashi Inagaki1, Narihito Okada1, Kazuyuki Tadatomo1, Keisuke Yamane2 (1.Yamaguchi Univ., 2.Toyohashigika Univ.)

Keywords:hydride vapor phase epitaxy,SiO2,GaN