[12p-P16-1~19] 15.4 III-V-group nitride crystals

[12p-P16-7] Dislocation densities of AlN layers grown by RF-MBE using an AlON buffer layer

〇Taiki Hata¹, Takahiro Yamazaki¹, Yusuke Yamane¹, Michiya Maeda¹, Kazuhide Kumakura², Hideki Yamamoto², Toshiki Makimoto¹ (1.Waseda Univ., 2.NTT BRL.)

Keywords:MBE,AlN,AlON